All MOSFET. AM4812 Datasheet

 

AM4812 Datasheet and Replacement


   Type Designator: AM4812
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 3.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 10 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 10.2 nS
   Cossⓘ - Output Capacitance: 80 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: SOP-8
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AM4812 Datasheet (PDF)

 ..1. Size:466K  ait semi
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AM4812

AiT Semiconductor Inc. AM4812 www.ait-ic.com 30V N-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION FEATURES The AM4812 is the N-Channel logic enhancement 30V / 7.8A, R = 16m (typ.)@V = 10V DS(ON) GSmode power field effect transistor which is 30V / 5.8A, R = 22m (typ.)@V = 4.5V DS(ON) GSproduced using high cell density. Advanced trench Super high density cell design f

 9.1. Size:372K  analog power
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AM4812

Analog Power AM4811PP-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize PRODUCT SUMMARYHigh Cell Density process. Low rDS(on) assures VDS (V) rDS(on) m() ID (A)minimal power loss and conserves energy, making this device ideal for use in power management 30 @ VGS = -10V 9.5-30circuitry. Typical applications are PWMDC-DC 52 @ VGS = -4.5V 7.5converte

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History: IPA060N06N | HLML6401 | IPB180N10S4-02 | FS70KM-2 | IRFP3077 | STP20N60M2-EP | AP85T03GH-HF

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