AM4812 MOSFET. Datasheet pdf. Equivalent
Type Designator: AM4812
Marking Code: M8
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 3.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 10 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 7.2 nC
trⓘ - Rise Time: 10.2 nS
Cossⓘ - Output Capacitance: 80 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
Package: SOP-8
AM4812 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AM4812 Datasheet (PDF)
am4812.pdf
AiT Semiconductor Inc. AM4812 www.ait-ic.com 30V N-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION FEATURES The AM4812 is the N-Channel logic enhancement 30V / 7.8A, R = 16m (typ.)@V = 10V DS(ON) GSmode power field effect transistor which is 30V / 5.8A, R = 22m (typ.)@V = 4.5V DS(ON) GSproduced using high cell density. Advanced trench Super high density cell design f
am4811p.pdf
Analog Power AM4811PP-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize PRODUCT SUMMARYHigh Cell Density process. Low rDS(on) assures VDS (V) rDS(on) m() ID (A)minimal power loss and conserves energy, making this device ideal for use in power management 30 @ VGS = -10V 9.5-30circuitry. Typical applications are PWMDC-DC 52 @ VGS = -4.5V 7.5converte
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