All MOSFET. 2SK3530 Datasheet

 

2SK3530 MOSFET. Datasheet pdf. Equivalent


   Type Designator: 2SK3530
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 70 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 21.5 nC
   trⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 105 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.9 Ohm
   Package: TO-220F

 2SK3530 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SK3530 Datasheet (PDF)

 ..1. Size:114K  fuji
2sk3530.pdf

2SK3530
2SK3530

2SK3530-01MR200304FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETSuper FAP-G Series Outline Drawings [mm]TO-220FFeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unl

 ..2. Size:189K  inchange semiconductor
2sk3530.pdf

2SK3530
2SK3530

isc N-Channel MOSFET Transistor 2SK3530FEATURESWith TO-220F packagingHigh speed switchingStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-So

 8.1. Size:221K  toshiba
2sk3538.pdf

2SK3530
2SK3530

2SK3538 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK3538 Switching Regulator, DC-DC Converter Applications Unit: mm Low drain-source ON resistance: R = 75 m (typ.) DS (ON) High forward transfer admittance: |Yfs| = 7.0 S (typ.) Low leakage current: I = 100 A (V = 500 V) DSS DS Enhancement-mode: V = 2.0 to 4.0 V (V = 10 V, I = 1 m

 8.2. Size:107K  panasonic
2sk3539.pdf

2SK3530
2SK3530

This product complies with the RoHS Directive (EU 2002/95/EC).Silicon MOSFETs (Small Signal)2SK3539Silicon N-channel MOSFETUnit: mmFor switching0.15+0.100.3+0.10.050.03 Features High-speed switching Wide frequency band1 2 Gate protection diode built-in(0.65) (0.65)1.30.12.00.2 Absolute Maximum Ratings Ta = 25C10Parameter Sym

 8.3. Size:252K  panasonic
2sk3539g0l.pdf

2SK3530
2SK3530

This product complies with the RoHS Directive (EU 2002/95/EC).Silicon MOSFETs (Small Signal)2SK3539GSilicon N-channel MOSFETFor switching Package Features Code High-speed switchingSMini3-F2 Wide frequency band Marking Symbol: 5F Gate protection diode built-in Pin Name1: Gate2: Source Absolute Maximum Ratings Ta = 25C3: DrainParame

 8.4. Size:116K  fuji
2sk3533-01.pdf

2SK3530
2SK3530

2SK3533-01200304FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETSuper FAP-G Series Outline Drawings [mm]TO-220ABFeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unle

 8.5. Size:110K  fuji
2sk3531-01.pdf

2SK3530
2SK3530

2SK3531-01200304FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETSuper FAP-G Series Outline Drawings [mm]TO-220ABFeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unle

 8.6. Size:112K  fuji
2sk3535-01.pdf

2SK3530
2SK3530

FUJI POWER MOSFET2SK3535-01200304Super FAP-G Series N-CHANNEL SILICON POWER MOSFETOutline Drawings [mm]FeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsfor SwitchingFoot Print PatternAbsolute Maximum Ratings at Tc=25C( unless otherwise specified)Item Symbol Ratings Unit Remarks Equivalent circuit sche

 8.7. Size:110K  fuji
2sk3532-01mr.pdf

2SK3530
2SK3530

2SK3532-01MR200304FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETSuper FAP-G Series Outline Drawings [mm]Features TO-220FHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unle

 8.8. Size:117K  fuji
2sk3534-01mr.pdf

2SK3530
2SK3530

2SK3534-01MR200304FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETSuper FAP-G Series Outline Drawings [mm]Features TO-220FHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unle

 8.9. Size:112K  fuji
2sk3537-01mr.pdf

2SK3530
2SK3530

2SK3537-01MR200304FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETOutline Drawings [mm]Super FAP-G SeriesTO-220FFeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C un

 8.10. Size:114K  fuji
2sk3532.pdf

2SK3530
2SK3530

2SK3532-01MR200304FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETSuper FAP-G Series Outline Drawings [mm]Features TO-220FHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unle

 8.11. Size:289K  inchange semiconductor
2sk3533-01.pdf

2SK3530
2SK3530

isc N-Channel MOSFET Transistor 2SK3533-01FEATURESDrain Current : I = 7A@ T =25D CDrain Source Voltage: V = 900V(Min)DSSStatic Drain-Source On-Resistance: R = 2(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

 8.12. Size:289K  inchange semiconductor
2sk3531-01.pdf

2SK3530
2SK3530

isc N-Channel MOSFET Transistor 2SK3531-01FEATURESDrain Current : I = 6A@ T =25D CDrain Source Voltage: V = 900V(Min)DSSStatic Drain-Source On-Resistance: R = 2.5(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen

 8.13. Size:280K  inchange semiconductor
2sk3532-01mr.pdf

2SK3530
2SK3530

isc N-Channel MOSFET Transistor 2SK3532-01MRFEATURESDrain Current : I = 6A@ T =25D CDrain Source Voltage: V = 900V(Min)DSSStatic Drain-Source On-Resistance: R = 2.5(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sol

 8.14. Size:280K  inchange semiconductor
2sk3534-01mr.pdf

2SK3530
2SK3530

isc N-Channel MOSFET Transistor 2SK3534-01MRFEATURESDrain Current : I = 7A@ T =25D CDrain Source Voltage: V = 900V(Min)DSSStatic Drain-Source On-Resistance: R = 2.(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole

 8.15. Size:280K  inchange semiconductor
2sk3537-01mr.pdf

2SK3530
2SK3530

isc N-Channel MOSFET Transistor 2SK3537-01MRFEATURESDrain Current : I = 23A@ T =25D CDrain Source Voltage: V = 150V(Min)DSSStatic Drain-Source On-Resistance: R = 70m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand so

Datasheet: ITF87068SQT , ITF87072DK8T , 12N65KL-TF , 20N03 , 2N0609 , 2SK2080 , 2SK2652 , 2SK2654 , 4435 , 2SK3681 , 3N150S , 80N08A , AOB12N65 , AOB2144L , IXFH10N100 , IXFH10N90 , IXFH11N80 .

History: IRFS9142

 

 
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