2SK3530 Datasheet and Replacement
Type Designator: 2SK3530
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 70
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Id|ⓘ - Maximum Drain Current: 7
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 8
nS
Cossⓘ -
Output Capacitance: 105
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.9
Ohm
Package:
TO-220F
- MOSFET Cross-Reference Search
2SK3530 Datasheet (PDF)
..1. Size:114K fuji
2sk3530.pdf 
2SK3530-01MR200304FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETSuper FAP-G Series Outline Drawings [mm]TO-220FFeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unl
..2. Size:189K inchange semiconductor
2sk3530.pdf 
isc N-Channel MOSFET Transistor 2SK3530FEATURESWith TO-220F packagingHigh speed switchingStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-So
8.1. Size:221K toshiba
2sk3538.pdf 
2SK3538 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK3538 Switching Regulator, DC-DC Converter Applications Unit: mm Low drain-source ON resistance: R = 75 m (typ.) DS (ON) High forward transfer admittance: |Yfs| = 7.0 S (typ.) Low leakage current: I = 100 A (V = 500 V) DSS DS Enhancement-mode: V = 2.0 to 4.0 V (V = 10 V, I = 1 m
8.2. Size:107K panasonic
2sk3539.pdf 
This product complies with the RoHS Directive (EU 2002/95/EC).Silicon MOSFETs (Small Signal)2SK3539Silicon N-channel MOSFETUnit: mmFor switching0.15+0.100.3+0.10.050.03 Features High-speed switching Wide frequency band1 2 Gate protection diode built-in(0.65) (0.65)1.30.12.00.2 Absolute Maximum Ratings Ta = 25C10Parameter Sym
8.3. Size:252K panasonic
2sk3539g0l.pdf 
This product complies with the RoHS Directive (EU 2002/95/EC).Silicon MOSFETs (Small Signal)2SK3539GSilicon N-channel MOSFETFor switching Package Features Code High-speed switchingSMini3-F2 Wide frequency band Marking Symbol: 5F Gate protection diode built-in Pin Name1: Gate2: Source Absolute Maximum Ratings Ta = 25C3: DrainParame
8.4. Size:116K fuji
2sk3533-01.pdf 
2SK3533-01200304FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETSuper FAP-G Series Outline Drawings [mm]TO-220ABFeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unle
8.5. Size:110K fuji
2sk3531-01.pdf 
2SK3531-01200304FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETSuper FAP-G Series Outline Drawings [mm]TO-220ABFeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unle
8.6. Size:112K fuji
2sk3535-01.pdf 
FUJI POWER MOSFET2SK3535-01200304Super FAP-G Series N-CHANNEL SILICON POWER MOSFETOutline Drawings [mm]FeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsfor SwitchingFoot Print PatternAbsolute Maximum Ratings at Tc=25C( unless otherwise specified)Item Symbol Ratings Unit Remarks Equivalent circuit sche
8.7. Size:110K fuji
2sk3532-01mr.pdf 
2SK3532-01MR200304FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETSuper FAP-G Series Outline Drawings [mm]Features TO-220FHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unle
8.8. Size:117K fuji
2sk3534-01mr.pdf 
2SK3534-01MR200304FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETSuper FAP-G Series Outline Drawings [mm]Features TO-220FHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unle
8.9. Size:112K fuji
2sk3537-01mr.pdf 
2SK3537-01MR200304FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETOutline Drawings [mm]Super FAP-G SeriesTO-220FFeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C un
8.10. Size:114K fuji
2sk3532.pdf 
2SK3532-01MR200304FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETSuper FAP-G Series Outline Drawings [mm]Features TO-220FHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unle
8.11. Size:289K inchange semiconductor
2sk3533-01.pdf 
isc N-Channel MOSFET Transistor 2SK3533-01FEATURESDrain Current : I = 7A@ T =25D CDrain Source Voltage: V = 900V(Min)DSSStatic Drain-Source On-Resistance: R = 2(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi
8.12. Size:289K inchange semiconductor
2sk3531-01.pdf 
isc N-Channel MOSFET Transistor 2SK3531-01FEATURESDrain Current : I = 6A@ T =25D CDrain Source Voltage: V = 900V(Min)DSSStatic Drain-Source On-Resistance: R = 2.5(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen
8.13. Size:280K inchange semiconductor
2sk3532-01mr.pdf 
isc N-Channel MOSFET Transistor 2SK3532-01MRFEATURESDrain Current : I = 6A@ T =25D CDrain Source Voltage: V = 900V(Min)DSSStatic Drain-Source On-Resistance: R = 2.5(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sol
8.14. Size:280K inchange semiconductor
2sk3534-01mr.pdf 
isc N-Channel MOSFET Transistor 2SK3534-01MRFEATURESDrain Current : I = 7A@ T =25D CDrain Source Voltage: V = 900V(Min)DSSStatic Drain-Source On-Resistance: R = 2.(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole
8.15. Size:280K inchange semiconductor
2sk3537-01mr.pdf 
isc N-Channel MOSFET Transistor 2SK3537-01MRFEATURESDrain Current : I = 23A@ T =25D CDrain Source Voltage: V = 150V(Min)DSSStatic Drain-Source On-Resistance: R = 70m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand so
Datasheet: ITF87068SQT
, ITF87072DK8T
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, 2N0609
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.
History: RUH3025M3
| JCS12N65SEI
| SFS06R06LGF
| TX216521M6R
| TPC8120
| 2SK1880S
| AP9960AGM-HF
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