AM4940N MOSFET. Datasheet pdf. Equivalent
Type Designator: AM4940N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
|Id|ⓘ - Maximum Drain Current: 8.3 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 20 nC
trⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 272 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
Package: SOIC-8
AM4940N Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AM4940N Datasheet (PDF)
am4940n.pdf
Analog Power AM4940NDual N-Channel 40-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m() ID (A)dissipation. Typical applications are DC-DC converters and power management in portable and 22 @ VGS = 10V 8.340battery-powered products
am4942n.pdf
Analog Power AM4942NDual N-Channel 40-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m()ID (A)dissipation. Typical applications are DC-DC 75 @ VGS = 10V 4.4converters and power management in portable and 40battery-powered products
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: IRLZ24NS
History: IRLZ24NS
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