All MOSFET. AM4964NT Datasheet

 

AM4964NT MOSFET. Datasheet pdf. Equivalent


   Type Designator: AM4964NT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 5.3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 3.8 nC
   trⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 57 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
   Package: SO-8

 AM4964NT Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AM4964NT Datasheet (PDF)

 ..1. Size:314K  analog power
 am4964nt.pdf

AM4964NT AM4964NT

Analog Power AM4964NTN-Channel 60-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)50 @ VGS = 10V5.3 Low thermal impedance 6060 @ VGS = 4.5V4.9 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM

 9.1. Size:219K  analog power
 am4962ne.pdf

AM4964NT AM4964NT

Analog Power AM4962NEN-Channel 60-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m()ID (A)dissipation. Typical applications are DC-DC 35 @ VGS = 10V 6.4converters and power management in portable and 60battery-powered products s

 9.2. Size:309K  analog power
 am4963p.pdf

AM4964NT AM4964NT

Analog Power AM4963PDual P-Channel 60-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)120 @ VGS = -10V -3.5 Low thermal impedance -60180 @ VGS = -4.5V -2.8 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE

 9.3. Size:205K  analog power
 am4960n.pdf

AM4964NT AM4964NT

Analog Power AM4960NN-Channel 60-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m()ID (A)dissipation. Typical applications are DC-DC converters and power management in portable and 89 @ VGS = 10V 4.060battery-powered products such

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: AOT9N70 | IXFM20N60

 

 
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