AM4964NT. Аналоги и основные параметры

Наименование производителя: AM4964NT

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 2.1 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 60 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 5.3 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 4 ns

Cossⓘ - Выходная емкость: 57 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.05 Ohm

Тип корпуса: SO-8

Аналог (замена) для AM4964NT

- подборⓘ MOSFET транзистора по параметрам

 

AM4964NT даташит

 ..1. Size:314K  analog power
 am4964nt.pdf pdf_icon

AM4964NT

Analog Power AM4964NT N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID (A) Low r trench technology DS(on) 50 @ VGS = 10V 5.3 Low thermal impedance 60 60 @ VGS = 4.5V 4.9 Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM

 9.1. Size:219K  analog power
 am4962ne.pdf pdf_icon

AM4964NT

Analog Power AM4962NE N-Channel 60-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARY rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m( )ID (A) dissipation. Typical applications are DC-DC 35 @ VGS = 10V 6.4 converters and power management in portable and 60 battery-powered products s

 9.2. Size:309K  analog power
 am4963p.pdf pdf_icon

AM4964NT

Analog Power AM4963P Dual P-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 120 @ VGS = -10V -3.5 Low thermal impedance -60 180 @ VGS = -4.5V -2.8 Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE

 9.3. Size:205K  analog power
 am4960n.pdf pdf_icon

AM4964NT

Analog Power AM4960N N-Channel 60-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARY rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m( )ID (A) dissipation. Typical applications are DC-DC converters and power management in portable and 89 @ VGS = 10V 4.0 60 battery-powered products such

ПОКАЗАТЬ ЕЩЁ

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