All MOSFET. AM50N03-12I Datasheet

 

AM50N03-12I MOSFET. Datasheet pdf. Equivalent


   Type Designator: AM50N03-12I
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 51 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 4 nC
   trⓘ - Rise Time: 5 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
   Package: TO-251

 AM50N03-12I Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AM50N03-12I Datasheet (PDF)

 ..1. Size:146K  analog power
 am50n03-12i.pdf

AM50N03-12I AM50N03-12I

Analog Power AM50N03-12IN-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize PRODUCT SUMMARYHigh Cell Density process. Low rDS(on) assures VDS (V) rDS(on) m() ID (A)minimal power loss and conserves energy, making this device ideal for use in power management 13 @ VGS = 10V 51circuitry. Typical applications are PWMDC-DC 3020 @ VGS = 4.5V 41converters,

 4.1. Size:361K  analog power
 am50n03-12d.pdf

AM50N03-12I AM50N03-12I

Analog Power AM50N03-12DN-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)13 @ VGS = 10V51 Low thermal impedance 3020 @ VGS = 4.5V41 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM

 8.1. Size:289K  analog power
 am50n06-15d.pdf

AM50N03-12I AM50N03-12I

Analog Power AM50N06-15DN-Channel 60-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)13 @ VGS = 10V51 Low thermal impedance 6018 @ VGS = 4.5V44 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM

 8.2. Size:106K  analog power
 am50n06-20d.pdf

AM50N03-12I AM50N03-12I

Analog Power AM50N06-20DN-Channel 60-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m() ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 20 @ VGS = 10V 41converters and power management in portable and 6029 @ VGS = 4.5V 34batte

 8.3. Size:299K  analog power
 am50n08-14d.pdf

AM50N03-12I AM50N03-12I

Analog Power AM50N08-14DN-Channel 80-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)11 @ VGS = 10V55 Low thermal impedance 8013 @ VGS = 4.5V51 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: STD12N05

 

 
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