AM50N03-12I. Аналоги и основные параметры

Наименование производителя: AM50N03-12I

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 50 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 51 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 5 ns

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.013 Ohm

Тип корпуса: TO-251

Аналог (замена) для AM50N03-12I

- подборⓘ MOSFET транзистора по параметрам

 

AM50N03-12I даташит

 ..1. Size:146K  analog power
 am50n03-12i.pdf pdf_icon

AM50N03-12I

Analog Power AM50N03-12I N-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize PRODUCT SUMMARY High Cell Density process. Low rDS(on) assures VDS (V) rDS(on) m( ) ID (A) minimal power loss and conserves energy, making this device ideal for use in power management 13 @ VGS = 10V 51 circuitry. Typical applications are PWMDC-DC 30 20 @ VGS = 4.5V 41 converters,

 4.1. Size:361K  analog power
 am50n03-12d.pdf pdf_icon

AM50N03-12I

Analog Power AM50N03-12D N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 13 @ VGS = 10V 51 Low thermal impedance 30 20 @ VGS = 4.5V 41 Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM

 8.1. Size:289K  analog power
 am50n06-15d.pdf pdf_icon

AM50N03-12I

Analog Power AM50N06-15D N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 13 @ VGS = 10V 51 Low thermal impedance 60 18 @ VGS = 4.5V 44 Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM

 8.2. Size:106K  analog power
 am50n06-20d.pdf pdf_icon

AM50N03-12I

Analog Power AM50N06-20D N-Channel 60-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m( ) ID (A) rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 20 @ VGS = 10V 41 converters and power management in portable and 60 29 @ VGS = 4.5V 34 batte

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... AM4963P, AM4964NT, AM4970N, AM4990N, AM4990NE, AM4992N, AM4998N, AM50N03-12D, 7N60, AM50N06-15D, AM50N06-20D, AM50N08-14D, AM50N10-14I, AM50N10-18D, AM50N10-55FP, AM50P02-09D, AM50P02-16D