All MOSFET. AM5922N Datasheet

 

AM5922N Datasheet and Replacement


   Type Designator: AM5922N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 7.9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 67 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
   Package: DFN3X2
 

 AM5922N substitution

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AM5922N Datasheet (PDF)

 ..1. Size:296K  analog power
 am5922n.pdf pdf_icon

AM5922N

Analog Power AM5922NN-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)23 @ VGS = 4.5V7.9 Low thermal impedance 2033 @ VGS = 2.5V6.6 Fast switching speed Typical Applications: DFN3x2-8L White LED boost converters S1 D1 Automotive Systems G1 Industrial DC/DC Conversion C

 9.1. Size:151K  analog power
 am5920n.pdf pdf_icon

AM5922N

Analog Power AM5920NDual N-Channel 20-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m()ID (A)dissipation. Typical applications are DC-DC converters and power management in portable and 58 @ VGS = 4.5V 5.0battery-powered products

Datasheet: AM5423P , AM5430N , AM5460N , AM5480N , AM5521C , AM5829P , AM5853 , AM5920N , 50N06 , AM5931P , AM5932N , AM60N02-09D , AM60N02-10D , AM60N03-09D , AM60N04-12D , AM60N10-13D , AM60N10-70P .

History: BUZ83 | 2SK1008-01 | H04N60F | SFF240J | NCE60NF055F | WMN30N80M3

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