All MOSFET. IXFH10N100 Datasheet

 

IXFH10N100 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IXFH10N100
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 300 W
   Maximum Drain-Source Voltage |Vds|: 1000 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 4.5 V
   Maximum Drain Current |Id|: 10 A
   Maximum Junction Temperature (Tj): 150 °C
   Total Gate Charge (Qg): 122 nC
   Rise Time (tr): 33 nS
   Drain-Source Capacitance (Cd): 310 pF
   Maximum Drain-Source On-State Resistance (Rds): 1.2 Ohm
   Package: TO247

 IXFH10N100 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXFH10N100 Datasheet (PDF)

 ..1. Size:570K  ixys
 ixfh10n100 ixfm10n100 ixfh12n100 ixfm12n100.pdf

IXFH10N100 IXFH10N100

VDSS ID25 RDS(on)HiPerFETTMIXFH/IXFM 10 N100 1000 V 10 A 1.20 Power MOSFETsIXFH/IXFM 12 N100 1000 V 12 A 1.05 N-Channel Enhancement Mode 250 ns High dv/dt, Low trr, HDMOSTM Family trr Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH)VDSS TJ = 25C to 150C 1000 VVDGR TJ = 25C to 150C; RGS = 1 M

 0.1. Size:568K  ixys
 ixfh10n100q.pdf

IXFH10N100 IXFH10N100

VDSS ID25 RDS(on)HiPerFETTMIXFH/IXFM 10 N100 1000 V 10 A 1.20 Power MOSFETsIXFH/IXFM 12 N100 1000 V 12 A 1.05 N-Channel Enhancement Mode 250 ns High dv/dt, Low trr, HDMOSTM Family trr Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH)VDSS TJ = 25C to 150C 1000 VVDGR TJ = 25C to 150C; RGS = 1 M

 0.2. Size:144K  ixys
 ixft12n100q ixfh12n100q ixft10n100q ixfh10n100q.pdf

IXFH10N100 IXFH10N100

VDSS ID25 RDS(on)HiPerFETTMIXFH/IXFT12N100Q 1000 V 12 A 1.05 Power MOSFETsIXFH/IXFT10N100Q 1000 V 10 A 1.20 Q Class trr 250 ns N-Channel Enhancement ModeAvalanche RatedLow Qg, High dv/dtSymbol Test Conditions Maximum Ratings TO-247 AD (IXFH)VDSS TJ = 25C to 150C 1000 VVDGR TJ = 25C to 150C; RGS

 7.1. Size:179K  ixys
 ixfh10n90 ixfm10n90 ixfh12n90 ixfm12n90 ixfh13n90 ixfm13n90.pdf

IXFH10N100 IXFH10N100

VDSS ID25 RDS(on)HiPerFETTMIXFH/IXFM 10 N90 900 V 10 A 1.1 Power MOSFETsIXFH/IXFM 12 N90 900 V 12 A 0.9 IXFH/IXFT 13 N90 900 V 13 A 0.8 N-Channel Enhancement Mode 250 ns High dv/dt, Low trr, HDMOSTM Family trr TO-247 AD (IXFH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 1

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP450 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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