IXFH10N90 MOSFET Datasheet: N-Ch, 900V, 10A. Full specification with pinout and replacement list

IXFH10N90 Specs and Replacement

Type Designator: IXFH10N90

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 300 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 315 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.1 Ohm

Package: TO247

IXFH10N90 substitution

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IXFH10N90 datasheet

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ixfh10n90 ixfm10n90 ixfh12n90 ixfm12n90 ixfh13n90 ixfm13n90.pdf pdf_icon

VDSS ID25 RDS(on) HiPerFETTM IXFH/IXFM 10 N90 900 V 10 A 1.1 Power MOSFETs IXFH/IXFM 12 N90 900 V 12 A 0.9 IXFH/IXFT 13 N90 900 V 13 A 0.8 N-Channel Enhancement Mode 250 ns High dv/dt, Low trr, HDMOSTM Family trr TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 1... See More ⇒

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ixfh10n100 ixfm10n100 ixfh12n100 ixfm12n100.pdf pdf_icon

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ixft12n100q ixfh12n100q ixft10n100q ixfh10n100q.pdf pdf_icon

VDSS ID25 RDS(on) HiPerFETTM IXFH/IXFT12N100Q 1000 V 12 A 1.05 Power MOSFETs IXFH/IXFT10N100Q 1000 V 10 A 1.20 Q Class trr 250 ns N-Channel Enhancement Mode Avalanche Rated Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25 C to 150 C 1000 V VDGR TJ = 25 C to 150 C; RGS... See More ⇒

Detailed specifications: 2SK2654, 2SK3530, 2SK3681, 3N150S, 80N08A, AOB12N65, AOB2144L, IXFH10N100, 2SK3568, IXFH11N80, IXFH12N100, IXFH12N100Q, IXFH12N90, IXFH12N90Q, IXFH13N50, IXFH13N80, IXFH13N80Q