AM6411P Specs and Replacement

Type Designator: AM6411P

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 9.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 75 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm

Package: TSSOP-8

AM6411P substitution

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AM6411P datasheet

 ..1. Size:166K  analog power
 am6411p.pdf pdf_icon

AM6411P

Analog Power AM6411P P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) m( )ID (A) These miniature surface mount MOSFETs utilize a high cell density trench process to provide low 13 @ VGS = -4.5V -9.5 rDS(on) and to ensure minimal power loss and heat -20 19 @ VGS = -2.5V -7.9 dissipation. Typical applications are DC-DC converters and power management in portable and 35... See More ⇒

 9.1. Size:559K  ait semi
 am6415.pdf pdf_icon

AM6411P

AiT Semiconductor Inc. AM6415 www.ait-ic.com MOSFET P-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION FEATURES AM6415 is available in a SOT-26 package. -20V/-4.4A, R = 71m (max.) @ V = -4.5V DS(ON) GS R = 104m (max.) @ V = -2.7V DS(ON) GS R = 110m (max.) @ V = -2.5V DS(ON) GS R = 193m (max.) @ V = -1.8V DS(ON) GS Super High Dense Cell Design Reliable and Rugg... See More ⇒

Detailed specifications: AM60N03-09D, AM60N04-12D, AM60N10-13D, AM60N10-70P, AM60N10-70PCFM, AM60P04-10D, AM6378, AM6401, AON6414A, AM6415, AM6441P, AM6520C, AM6544C, AM6602, AM6612N, AM6612NE, AM6802

Keywords - AM6411P MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.