All MOSFET. AM6411P Datasheet

 

AM6411P Datasheet and Replacement


   Type Designator: AM6411P
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 9.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 75 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
   Package: TSSOP-8
 

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AM6411P Datasheet (PDF)

 ..1. Size:166K  analog power
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AM6411P

Analog Power AM6411PP-Channel 20-V (D-S) MOSFET PRODUCT SUMMARYVDS (V) rDS(on) m()ID (A)These miniature surface mount MOSFETs utilize a high cell density trench process to provide low 13 @ VGS = -4.5V -9.5rDS(on) and to ensure minimal power loss and heat -20 19 @ VGS = -2.5V -7.9dissipation. Typical applications are DC-DC converters and power management in portable and 35

 9.1. Size:559K  ait semi
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AM6411P

AiT Semiconductor Inc. AM6415 www.ait-ic.com MOSFET P-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION FEATURES AM6415 is available in a SOT-26 package. -20V/-4.4A, R = 71m(max.) @ V = -4.5V DS(ON) GSR = 104m(max.) @ V = -2.7V DS(ON) GSR = 110m(max.) @ V = -2.5V DS(ON) GSR = 193m(max.) @ V = -1.8V DS(ON) GS Super High Dense Cell Design Reliable and Rugg

Datasheet: AM60N03-09D , AM60N04-12D , AM60N10-13D , AM60N10-70P , AM60N10-70PCFM , AM60P04-10D , AM6378 , AM6401 , AON6414A , AM6415 , AM6441P , AM6520C , AM6544C , AM6602 , AM6612N , AM6612NE , AM6802 .

History: PSMN006-20K | AM90N03-03B | IRFD9220PBF

Keywords - AM6411P MOSFET datasheet

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