All MOSFET. IXFH20N80Q Datasheet

 

IXFH20N80Q MOSFET. Datasheet pdf. Equivalent

Type Designator: IXFH20N80Q

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 360 W

Maximum Drain-Source Voltage |Vds|: 800 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4.5 V

Maximum Drain Current |Id|: 20 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.42 Ohm

Package: TO247

IXFH20N80Q Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXFH20N80Q Datasheet (PDF)

1.1. ixfh20n80p ixft20n80p ixfv20n80p.pdf Size:326K _ixys

IXFH20N80Q
IXFH20N80Q

IXFH 20N80P VDSS = 800 V PolarHVTM HiPerFET IXFT 20N80P ID25 = 20 A Power MOSFET IXFV 20N80P ? ? RDS(on) ? 520 m ? ? ? ? ? ? ? N-Channel Enhancement Mode IXFV 20N80PS ? trr ? 250 ns ? ? ? Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings TO-247 (IXFH) VDSS TJ = 25 C to 150 C 800 V VDGR TJ = 25 C to 150 C; RGS = 1 M? 800 V (TAB) VGSS Continuou

1.2. ixfh20n80q ixfk20n80q ixft20n80q.pdf Size:149K _ixys

IXFH20N80Q
IXFH20N80Q

IXFH20N80Q VDSS = 800 V HiPerFETTM IXFK20N80Q ID25 = 20 A Power MOSFETs ? ? IXFT20N80Q RDS(on) = 0.42 ? ? ? Q-Class N-Channel Enhancement Mode ? ? trr ? 250 ns ? ? Avalanche Rated, Low Qg, High dv/dt Preliminary Data TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 800 V VDGR TJ = 25C to 150C; RGS = 1 M? 800 V (TAB) VGS Continuous 20

3.1. ixfh20n60q ixft20n60q.pdf Size:144K _ixys

IXFH20N80Q
IXFH20N80Q

IXFH 20N60Q VDSS = 600 V HiPerFETTM IXFT 20N60Q ID25 = 20 A Power MOSFETs Ω RDS(on) = 0.35 Ω Ω Ω Ω Q-Class ≤ trr ≤ ≤ 250ns ≤ ≤ N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Gate Charge and Capacitances Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 600 V VGS C

3.2. ixfh15n60 ixfh20n60 ixfm15n60 ixfm20n60.pdf Size:82K _ixys

IXFH20N80Q
IXFH20N80Q

VDSS ID25 RDS(on) HiPerFETTM IXFH/IXFM 15 N60 600 V 15 A 0.50 W Power MOSFETs IXFH/IXFM 20 N60 600 V 20 A 0.35 W trr ? 250 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25C to 150C 600 V VDGR TJ = 25C to 150C; RGS = 1 MW 600 V (TAB) VGS Continuous 20 V VGSM Transient 30 V ID25 TC = 25C 15N60

Datasheet: IXFH14N100 , IXFH14N80 , IXFH15N100 , IXFH15N60 , IXFH15N80 , IXFH16N90 , IXFH20N60 , IXFH20N60Q , 40673 , IXFH21N50 , IXFH22N55 , IXFH24N50 , IXFH26N50 , IXFH26N50Q , IXFH26N60Q , IXFH30N50 , IXFH32N50 .

 


IXFH20N80Q
  IXFH20N80Q
  IXFH20N80Q
 

social 

LIST

Last Update

MOSFET: IRLZ34SPBF | IRLZ34S | IRLZ34PBF | IRLZ34NSPBF | IRLZ34NPBF | IRLZ34NLPBF | IRLZ34L | IRLZ44NSPBF | IRLZ44NPBF | IRLZ44NLPBF | IRLZ44ZSPBF | IRLZ44ZPBF | IRLZ44ZLPBF | IRLZ44SPBF | IRLZ44S |