All MOSFET. AM7924N Datasheet

 

AM7924N MOSFET. Datasheet pdf. Equivalent


   Type Designator: AM7924N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.4 V
   |Id|ⓘ - Maximum Drain Current: 22 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 73 nC
   trⓘ - Rise Time: 36 nS
   Cossⓘ - Output Capacitance: 511 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0034 Ohm
   Package: DFN5X6

 AM7924N Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AM7924N Datasheet (PDF)

 ..1. Size:303K  analog power
 am7924n.pdf

AM7924N AM7924N

Analog Power AM7924NDual N-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)3.4 @ VGS = 4.5V60c Low thermal impedance 205 @ VGS = 2.5V60c Fast switching speed DFN5X6-8L Typical Applications: Power Routing Li Ion Battery Packs Level Shifting and Driver Circuits ABSOLUTE MAX

 9.1. Size:105K  analog power
 am7920n.pdf

AM7924N AM7924N

Analog Power AM7920NDual N-Channel 20-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m() ID (A)rDS(on) and to ensure minimal power loss and heat 10 @ V = 4.5V 33GSdissipation. Typical applications are DC-DC 20converters and power management in portable and 13 @ V = 2.5V 29GS

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History: IRF5803TRPBF | IXFH75N10 | IXTQ60N20L2 | IRLD110

 

 
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