AM7931P MOSFET. Datasheet pdf. Equivalent
Type Designator: AM7931P
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 16 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
|Id|ⓘ - Maximum Drain Current: 29 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 25 nC
trⓘ - Rise Time: 5 nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
Package: SOIC-8PP
AM7931P Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AM7931P Datasheet (PDF)
am7931p.pdf
Analog Power AM7931PDual P-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m() ID (A)rDS(on) and to ensure minimal power loss and heat 13 @ V = 10V 29GSdissipation. Typical applications are DC-DC -30converters and power management in portable and 18 @ V = 4.5V 25GS
am7930n.pdf
Analog Power AM7930NDual N-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m() ID (A)rDS(on) and to ensure minimal power loss and heat 8 @ V = 10V 37GSdissipation. Typical applications are DC-DC 30converters and power management in portable and 12 @ V = 4.5V 30GSb
am7933p.pdf
Analog Power AM7933PDual P-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)8 @ VGS = -10V-55c Low thermal impedance -3012 @ VGS = -4.5V-45c Fast switching speed DFN5X6-8L Typical Applications: Load Switches DC/DC Conversion Motor Drives ABSOLUTE MAXIMUM RATINGS (TA = 25
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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