AM8882 Specs and Replacement

Type Designator: AM8882

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7.2 nS

Cossⓘ - Output Capacitance: 230 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm

Package: DFN2X3

AM8882 substitution

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AM8882 datasheet

 ..1. Size:781K  ait semi
 am8882.pdf pdf_icon

AM8882

AiT Semiconductor Inc. AM8882 www.ait-ic.com MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION FEATURES The AM8882 uses advanced trench technology to V = 20V, I = 8A DS D provide excellent R , low gate charge and Typ.R = 9.5m @ V = 4.5V DS(ON) DS(ON) GS operation with gate voltages as low as 1.8V. The Typ.R = 13m @ V = 2.5V DS(ON) GS device is suitable for use... See More ⇒

 9.1. Size:741K  ait semi
 am8881.pdf pdf_icon

AM8882

AiT Semiconductor Inc. AM8881 www.ait-ic.com MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION FEATURES The AM8881 uses advanced trench technology to V = 20V, I = 11A DS D provide excellent R , low gate charge and R ... See More ⇒

Detailed specifications: AM8206, AM8208, AM8810, AM8811, AM8812, AM8814, AM8820, AM8881, IRLZ44N, AM8958, AM8958C, AM8N20-600D, AM8N25-550D, AM90N02-04D, AM90N03-01P, AM90N03-02D, AM90N03-03B

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.