All MOSFET. AM8882 Datasheet

 

AM8882 Datasheet and Replacement


   Type Designator: AM8882
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id|ⓘ - Maximum Drain Current: 8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 7.2 nS
   Cossⓘ - Output Capacitance: 230 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
   Package: DFN2X3
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AM8882 Datasheet (PDF)

 ..1. Size:781K  ait semi
 am8882.pdf pdf_icon

AM8882

AiT Semiconductor Inc. AM8882 www.ait-ic.com MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION FEATURES The AM8882 uses advanced trench technology to V = 20V, I = 8A DS Dprovide excellent R , low gate charge and Typ.R = 9.5m @ V = 4.5V DS(ON) DS(ON) GSoperation with gate voltages as low as 1.8V. The Typ.R = 13m @ V = 2.5V DS(ON) GSdevice is suitable for use

 9.1. Size:741K  ait semi
 am8881.pdf pdf_icon

AM8882

AiT Semiconductor Inc. AM8881 www.ait-ic.com MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION FEATURES The AM8881 uses advanced trench technology to V = 20V, I = 11A DS Dprovide excellent R , low gate charge and R

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: ZXMN3A02N8 | 2SK4096LS | UT8205A | MBNP2074G6 | TK7P60W5 | NTP6410AN | WML11N80M3

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