AM90N06-16P Specs and Replacement

Type Designator: AM90N06-16P

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 300 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 90 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 17 nS

Cossⓘ - Output Capacitance: 184 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0165 Ohm

Package: TO-220AB

AM90N06-16P substitution

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AM90N06-16P datasheet

 ..1. Size:296K  analog power
 am90n06-16p.pdf pdf_icon

AM90N06-16P

Analog Power AM90N06-16P N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 16.5 @ VGS = 10V Low thermal impedance 60 90a 21 @ VGS = 4.5V Fast switching speed Typical Applications White LED boost converters Automotive Systems DRAIN connected Industrial DC/DC Conversion Circuits... See More ⇒

 5.1. Size:290K  analog power
 am90n06-10pcfm.pdf pdf_icon

AM90N06-16P

Analog Power AM90N06-10PCFM N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 9.9 @ VGS = 10V Low thermal impedance 60 64a 13.5 @ VGS = 5.5V Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXI... See More ⇒

 5.2. Size:308K  analog power
 am90n06-10p.pdf pdf_icon

AM90N06-16P

Analog Power AM90N06-10P N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 9.9 @ VGS = 10V Low thermal impedance 60 90a 13 @ VGS = 4.5V Fast switching speed Typical Applications PoE Power Sourcing Equipment PoE Powered Devices Telecom DC/DC converters White LED boost conver... See More ⇒

 5.3. Size:250K  analog power
 am90n06-15p.pdf pdf_icon

AM90N06-16P

Analog Power AM90N06-15P N-Channel 60-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m( ) ID (A) rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 10.5 @ VGS = 10V converters and power management in portable and 60 90a 13 @ VGS = 4.5V ba... See More ⇒

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Detailed specifications: AM90N06-03B, AM90N06-03P, AM90N06-04D, AM90N06-04M2B, AM90N06-09B, AM90N06-10P, AM90N06-10PCFM, AM90N06-15P, IRFP260, AM90N06-19B, AM90N06-25PCFM, AM90N06-30P, AM90N08-04B, AM90N08-05P, AM90N08-08P, AM90N08-10B, AM90N10-14P

Keywords - AM90N06-16P MOSFET specs

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