Справочник MOSFET. AM90N06-16P

 

AM90N06-16P Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: AM90N06-16P
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 300 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 90 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 17 ns
   Cossⓘ - Выходная емкость: 184 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0165 Ohm
   Тип корпуса: TO-220AB
     - подбор MOSFET транзистора по параметрам

 

AM90N06-16P Datasheet (PDF)

 ..1. Size:296K  analog power
am90n06-16p.pdfpdf_icon

AM90N06-16P

Analog Power AM90N06-16PN-Channel 60-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)16.5 @ VGS = 10V Low thermal impedance 6090a21 @ VGS = 4.5V Fast switching speed Typical Applications: White LED boost converters Automotive Systems DRAIN connected Industrial DC/DC Conversion Circuits

 5.1. Size:290K  analog power
am90n06-10pcfm.pdfpdf_icon

AM90N06-16P

Analog Power AM90N06-10PCFMN-Channel 60-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)9.9 @ VGS = 10V Low thermal impedance 6064a13.5 @ VGS = 5.5V Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXI

 5.2. Size:308K  analog power
am90n06-10p.pdfpdf_icon

AM90N06-16P

Analog Power AM90N06-10PN-Channel 60-V (D-S) MOSFET PRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)9.9 @ VGS = 10V Low thermal impedance 6090a13 @ VGS = 4.5V Fast switching speed Typical Applications: PoE Power Sourcing Equipment PoE Powered Devices Telecom DC/DC converters White LED boost conver

 5.3. Size:250K  analog power
am90n06-15p.pdfpdf_icon

AM90N06-16P

Analog Power AM90N06-15PN-Channel 60-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m() ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 10.5 @ VGS = 10Vconverters and power management in portable and 6090a13 @ VGS = 4.5Vba

Другие MOSFET... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: NCE70T360 | ME85P03 | SI2314 | 2SK4192LS | SMN03T80F | SI7810DN | SM4606

 

 
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