All MOSFET. AM9412N Datasheet

 

AM9412N Datasheet and Replacement


   Type Designator: AM9412N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 3.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 5 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
   Package: SO-8
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AM9412N Datasheet (PDF)

 ..1. Size:209K  analog power
 am9412n.pdf pdf_icon

AM9412N

Analog Power AM9412NN-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize PRODUCT SUMMARYHigh Cell Density process. Low rDS(on) assures VDS (V) rDS(on) m()ID (A)minimal power loss and conserves energy, making this device ideal for use in power management 22 @ VGS = 10V 9.030circuitry. Typical applications are PWMDC-DC 36 @ VGS = 4.5V 7.0converters,

 9.1. Size:209K  analog power
 am9410n.pdf pdf_icon

AM9412N

Analog Power AM9410NN-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize PRODUCT SUMMARYHigh Cell Density process. Low rDS(on) assures VDS (V) rDS(on) m() ID (A)minimal power loss and conserves energy, making this device ideal for use in power management 24 @ VGS = 10V 8.1circuitry. Typical applications are PWMDC-DC 3033 @ VGS = 4.5V 6.9converters, p

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History: SML100L16 | CHM85A3PAGP | SQ9407EY-T1 | ALD1103DB | TK7P65W | SFFX054Z

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