All MOSFET. STN18D20 Datasheet

 

STN18D20 Datasheet and Replacement


   Type Designator: STN18D20
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 112 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 18 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 110 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.22 Ohm
   Package: TO-252
 

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STN18D20 Datasheet (PDF)

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STN18D20

STN18D20 N Channel Enhancement Mode MOSFET 18.0A DESCRIPTION STN18D20 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as power management

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STN18D20

STN1810 N Channel Enhancement Mode MOSFET 8.0A DESCRIPTION STN1810 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These applications such as notebook computer power

Datasheet: AM9926 , AM9926N , AM9945N , AM9945NE , AM9N65P , STN1012 , STN1304 , STN1810 , IRFZ48N , STN1NF20 , STN2018 , STN2300 , STN2300A , STN2302 , STN2306 , STN2342 , STN2342A .

History: YJL03G10A | IPB34CN10N

Keywords - STN18D20 MOSFET datasheet

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