STN18D20 Specs and Replacement

Type Designator: STN18D20

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 112 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 18 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 23 nS

Cossⓘ - Output Capacitance: 110 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.22 Ohm

Package: TO-252

STN18D20 substitution

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STN18D20 datasheet

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STN18D20

STN18D20 N Channel Enhancement Mode MOSFET 18.0A DESCRIPTION STN18D20 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as power management ... See More ⇒

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STN18D20

STN1810 N Channel Enhancement Mode MOSFET 8.0A DESCRIPTION STN1810 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These applications such as notebook computer power ... See More ⇒

Detailed specifications: AM9926, AM9926N, AM9945N, AM9945NE, AM9N65P, STN1012, STN1304, STN1810, STP65NF06, STN1NF20, STN2018, STN2300, STN2300A, STN2302, STN2306, STN2342, STN2342A

Keywords - STN18D20 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.