STN2018 Specs and Replacement

Type Designator: STN2018

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 135 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm

Package: SOP-8

STN2018 substitution

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STN2018 datasheet

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STN2018

STN2018 N Channel Enhancement Mode MOSFET 10.0A DESCRIPTION STN2018 is the N-Channel logic enhancement mode power field effect transistors which are produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, notbook computer power ... See More ⇒

Detailed specifications: AM9945N, AM9945NE, AM9N65P, STN1012, STN1304, STN1810, STN18D20, STN1NF20, 7N60, STN2300, STN2300A, STN2302, STN2306, STN2342, STN2342A, STN2NE10, STN2NE10L

Keywords - STN2018 MOSFET specs

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