All MOSFET. STN2018 Datasheet

 

STN2018 Datasheet and Replacement


   Type Designator: STN2018
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 135 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: SOP-8
 

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STN2018 Datasheet (PDF)

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STN2018

STN2018 N Channel Enhancement Mode MOSFET 10.0A DESCRIPTION STN2018 is the N-Channel logic enhancement mode power field effect transistors which are produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, notbook computer power

Datasheet: AM9945N , AM9945NE , AM9N65P , STN1012 , STN1304 , STN1810 , STN18D20 , STN1NF20 , MMIS60R580P , STN2300 , STN2300A , STN2302 , STN2306 , STN2342 , STN2342A , STN2NE10 , STN2NE10L .

History: SP8K31FRA | 2SK888 | BUZ83 | SFF240J | APT50M50L2FLLG | 2SJ605-Z | WMN30N80M3

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