All MOSFET. STN2018 Datasheet

 

STN2018 MOSFET. Datasheet pdf. Equivalent


   Type Designator: STN2018
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.4 V
   |Id|ⓘ - Maximum Drain Current: 10 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 18 nC
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 135 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: SOP-8

 STN2018 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STN2018 Datasheet (PDF)

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 stn2018.pdf

STN2018 STN2018

STN2018 N Channel Enhancement Mode MOSFET 10.0A DESCRIPTION STN2018 is the N-Channel logic enhancement mode power field effect transistors which are produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, notbook computer power

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: WM06N03M | SL2343

 

 
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