All MOSFET. STN2342A Datasheet

 

STN2342A MOSFET. Datasheet pdf. Equivalent


   Type Designator: STN2342A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 5.8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 7.7 nC
   trⓘ - Rise Time: 135 nS
   Cossⓘ - Output Capacitance: 92 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
   Package: SOT-23L

 STN2342A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STN2342A Datasheet (PDF)

 ..1. Size:378K  semtron
 stn2342a.pdf

STN2342A STN2342A

STN2342A 20V N-Channel Enhancement Mode MOSFETDESCRIPTIONFEATUREThe STN2342A is the N-Channel logic 20V/5.8A, RDS(ON) =20m(typ.)@VGS =4.5V enhancement mode power field effect transistor is 20V/4.0A, RDS(ON) =25m(typ.)@VGS =2.5V produced using high cell density. advanced trench 20V/2.8A, RDS(ON) =33m(typ.)@VGS =1.8V technology to provide excellent RD

 7.1. Size:372K  semtron
 stn2342.pdf

STN2342A STN2342A

STN2342 20V N-Channel Enhancement Mode MOSFETDESCRIPTIONFEATUREThe STN2342 is the N-Channel logic enhancement 20V/6.0A, RDS(ON) =25m(typ.)@VGS =4.5V mode power field effect transistor is produced using 20V/4.5A, RDS(ON) =32m(typ.)@VGS =2.5V high cell density. advanced trench technology to 20V/3.8A, RDS(ON) =48m(typ.)@VGS =1.8V provide excellent RDS

 8.1. Size:260K  st
 2stf2340 2stn2340.pdf

STN2342A STN2342A

2STF23402STN2340Low voltage fast-switching PNP power transistorsFeatures Very low collector-emitter saturation voltage High current gain characteristic44 Fast switching speed3322Applications 11 LEDSOT-89 SOT-223 Motherboard & hard disk drive Mobile equipment DC-DC converterFigure 1. Internal schematic diagramDescriptionThe devices

 9.1. Size:283K  st
 2std2360 2stf2360 2stn2360.pdf

STN2342A STN2342A

2STD23602STF2360 - 2STN2360Low voltage fast-switching PNP power transistorsFeatures4 Very low collector-emitter saturation voltage4 High current gain characteristic 3322 Fast-switching speed 11 SOT-223 SOT-89ApplicationsTAB Emergency lighting LED3 Voltage regulation1 Relay drive TO-252 (DPAK)DescriptionFigure 1. Internal schem

 9.2. Size:151K  semtron
 stn2306.pdf

STN2342A STN2342A

STN2306 30V N-Channel Enhancement Mode MOSFETDESCRIPTIONFEATUREThe STN2306 is the N-Channel logic enhancement 30V/3.6A, RDS(ON)= 45m(typ.)@VGS= 10V mode power field effect transistor is produced using 30V/2.8A, RDS(ON)= 55m(typ.)@VGS= 4.5V high cell density. advanced trench technology to Super high density cell design for extremely provide excellent RDS(ON)

 9.3. Size:368K  semtron
 stn2300a.pdf

STN2342A STN2342A

STN2300A 20V N-Channel Enhancement Mode MOSFETDESCRIPTIONFEATUREThe STN2300A is the N-Channel logic 20V/4.0A, RDS(ON) =22m(typ.)@VGS =4.5V enhancement mode power field effect transistor is 20V/3.0A, RDS(ON) =25m(typ.)@VGS =2.5V produced using high cell density. advanced trench 20V/2.0A, RDS(ON) =33m(typ.)@VGS =1.8V technology to provide excellent RD

 9.4. Size:367K  semtron
 stn2300.pdf

STN2342A STN2342A

STN2300 20V N-Channel Enhancement Mode MOSFETDESCRIPTIONFEATUREThe STN2300 is the N-Channel logic enhancement 20V/4.0A, RDS(ON) =26m(typ.)@VGS =4.5V mode power field effect transistor is produced using 20V/3.0A, RDS(ON) =35m(typ.)@VGS =2.5V high cell density. advanced trench technology to 20V/2.0A, RDS(ON) =50m(typ.)@VGS =1.8V provide excellent RDS

 9.5. Size:367K  semtron
 stn2302.pdf

STN2342A STN2342A

STN2302 20V N-Channel Enhancement Mode MOSFETDESCRIPTIONFEATUREThe STN2302 is the N-Channel logic enhancement 20V/4.0A, RDS(ON) =50m(typ.)@VGS =4.5V mode power field effect transistor is produced using 20V/3.0A, RDS(ON) =65m(typ.)@VGS =2.5V high cell density. advanced trench technology to provide excellent RDS(ON). low gate charge and Super high densi

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: IXTH30N60P

 

 
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