STN2342A MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: STN2342A
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 1.2 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 1 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 5.8 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 7.7 nC
trⓘ - Время нарастания: 135 ns
Cossⓘ - Выходная емкость: 92 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.025 Ohm
Тип корпуса: SOT-23L
STN2342A Datasheet (PDF)
stn2342a.pdf
STN2342A 20V N-Channel Enhancement Mode MOSFETDESCRIPTIONFEATUREThe STN2342A is the N-Channel logic 20V/5.8A, RDS(ON) =20m(typ.)@VGS =4.5V enhancement mode power field effect transistor is 20V/4.0A, RDS(ON) =25m(typ.)@VGS =2.5V produced using high cell density. advanced trench 20V/2.8A, RDS(ON) =33m(typ.)@VGS =1.8V technology to provide excellent RD
stn2342.pdf
STN2342 20V N-Channel Enhancement Mode MOSFETDESCRIPTIONFEATUREThe STN2342 is the N-Channel logic enhancement 20V/6.0A, RDS(ON) =25m(typ.)@VGS =4.5V mode power field effect transistor is produced using 20V/4.5A, RDS(ON) =32m(typ.)@VGS =2.5V high cell density. advanced trench technology to 20V/3.8A, RDS(ON) =48m(typ.)@VGS =1.8V provide excellent RDS
2stf2340 2stn2340.pdf
2STF23402STN2340Low voltage fast-switching PNP power transistorsFeatures Very low collector-emitter saturation voltage High current gain characteristic44 Fast switching speed3322Applications 11 LEDSOT-89 SOT-223 Motherboard & hard disk drive Mobile equipment DC-DC converterFigure 1. Internal schematic diagramDescriptionThe devices
2std2360 2stf2360 2stn2360.pdf
2STD23602STF2360 - 2STN2360Low voltage fast-switching PNP power transistorsFeatures4 Very low collector-emitter saturation voltage4 High current gain characteristic 3322 Fast-switching speed 11 SOT-223 SOT-89ApplicationsTAB Emergency lighting LED3 Voltage regulation1 Relay drive TO-252 (DPAK)DescriptionFigure 1. Internal schem
stn2306.pdf
STN2306 30V N-Channel Enhancement Mode MOSFETDESCRIPTIONFEATUREThe STN2306 is the N-Channel logic enhancement 30V/3.6A, RDS(ON)= 45m(typ.)@VGS= 10V mode power field effect transistor is produced using 30V/2.8A, RDS(ON)= 55m(typ.)@VGS= 4.5V high cell density. advanced trench technology to Super high density cell design for extremely provide excellent RDS(ON)
stn2300a.pdf
STN2300A 20V N-Channel Enhancement Mode MOSFETDESCRIPTIONFEATUREThe STN2300A is the N-Channel logic 20V/4.0A, RDS(ON) =22m(typ.)@VGS =4.5V enhancement mode power field effect transistor is 20V/3.0A, RDS(ON) =25m(typ.)@VGS =2.5V produced using high cell density. advanced trench 20V/2.0A, RDS(ON) =33m(typ.)@VGS =1.8V technology to provide excellent RD
stn2300.pdf
STN2300 20V N-Channel Enhancement Mode MOSFETDESCRIPTIONFEATUREThe STN2300 is the N-Channel logic enhancement 20V/4.0A, RDS(ON) =26m(typ.)@VGS =4.5V mode power field effect transistor is produced using 20V/3.0A, RDS(ON) =35m(typ.)@VGS =2.5V high cell density. advanced trench technology to 20V/2.0A, RDS(ON) =50m(typ.)@VGS =1.8V provide excellent RDS
stn2302.pdf
STN2302 20V N-Channel Enhancement Mode MOSFETDESCRIPTIONFEATUREThe STN2302 is the N-Channel logic enhancement 20V/4.0A, RDS(ON) =50m(typ.)@VGS =4.5V mode power field effect transistor is produced using 20V/3.0A, RDS(ON) =65m(typ.)@VGS =2.5V high cell density. advanced trench technology to provide excellent RDS(ON). low gate charge and Super high densi
Другие MOSFET... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF540N , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
