All MOSFET. STN2NE10L Datasheet

 

STN2NE10L Datasheet and Replacement


   Type Designator: STN2NE10L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 1.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 45 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
   Package: SOT-223
 

 STN2NE10L substitution

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STN2NE10L Datasheet (PDF)

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STN2NE10L

STN2NE10LN-channel 100V - 0.33 -2A - SOT-223STripFET Power MOSFETGeneral featuresVDSS Type RDS(on) ID(@Tjmax)2STN2NE10L 100V

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STN2NE10L

STN2NE10N - CHANNEL 100V - 0.33 - 2A - SOT-223STripFET POWER MOSFETPRELIMINARY DATATYPE VDSS RDS(on) IDSTN2NE10 100 V

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STN2NE10L

STN2NE06N-CHANNEL 60V - 0.18 - 2A - SOT-223STripFET POWER MOSFETTYPE VDSS RDS(on) IDSTN2NE06 60 V

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STN2NE10L

STN2N10LN - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORADVANCE DATATYPE V R IDSS DS(on) DCONTSTN2N10L 100 V

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Datasheet: STN2018 , STN2300 , STN2300A , STN2302 , STN2306 , STN2342 , STN2342A , STN2NE10 , IRF9640 , STN3400 , STN3400A , STN3404 , STN3406 , STN3414 , STN3446 , STN3456 , STN3P6F6 .

History: NVMFD5C466N | NCE60P08AS

Keywords - STN2NE10L MOSFET datasheet

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