All MOSFET. STN3414 Datasheet

 

STN3414 MOSFET. Datasheet pdf. Equivalent


   Type Designator: STN3414
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 11 nC
   trⓘ - Rise Time: 42 nS
   Cossⓘ - Output Capacitance: 116 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.038 Ohm
   Package: SOT-23L

 STN3414 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STN3414 Datasheet (PDF)

 ..1. Size:360K  semtron
 stn3414.pdf

STN3414 STN3414

STN3414 20V N-Channel Enhancement Mode MOSFETDESCRIPTIONFEATUREThe STN3414 is the N-Channel logic enhancement 20V/5.0A, RDS(ON) =30m(typ.)@VGS =4.5V mode power field effect transistor is produced using 20V/4.5A, RDS(ON) =42m(typ.)@VGS =2.5V high cell density. advanced trench technology to 20V/3.8A, RDS(ON) =50m(typ.)@VGS =1.8V provide excellent RDS

 9.1. Size:368K  semtron
 stn3400a.pdf

STN3414 STN3414

STN3400A 30V N-Channel Enhancement Mode MOSFETDESCRIPTIONFEATUREThe STN3400A is the N-Channel logic 30V/5.6A, RDS(ON) =28m(typ.)@VGS =10V enhancement mode power field effect transistor is 30V/5.0A, RDS(ON) =30m(typ.)@VGS =4.5V produced using high cell density. advanced trench 30V/3.2A, RDS(ON) =35m(typ.)@VGS =2.5V technology to provide excellent RDS

 9.2. Size:371K  semtron
 stn3404.pdf

STN3414 STN3414

STN3404 30V N-Channel Enhancement Mode MOSFETDESCRIPTIONFEATUREThe STN3404 is the N-Channel logic enhancement 30V/6.0A, RDS(ON) =18m(typ.)@VGS =10V mode power field effect transistor is produced using 30V/4.8A, RDS(ON) =25m(typ.)@VGS =4.5V high cell density. advanced trench technology to provide excellent Super high density cell design for extremely l

 9.3. Size:372K  semtron
 stn3406.pdf

STN3414 STN3414

STN3406 30V N-Channel Enhancement Mode MOSFETDESCRIPTIONFEATUREThe STN3406 is the N-Channel logic enhancement 30V/5.6A, RDS(ON) =23m(typ.)@VGS =10V mode power field effect transistor is produced using 30V/4.2A, RDS(ON) =35m(typ.)@VGS =4.5V high cell density. advanced trench technology to provide excellent Super high density cell design for extremely l

 9.4. Size:373K  semtron
 stn3400.pdf

STN3414 STN3414

STN3400 30V N-Channel Enhancement Mode MOSFETDESCRIPTIONFEATUREThe STN3400 is the N-Channel logic enhancement 30V/5.8A, RDS(ON) =24m(typ.)@VGS =10V mode power field effect transistor is produced using 30V/5.0A, RDS(ON) =26m(typ.)@VGS =4.5V high cell density. advanced trench technology to 30V/3.5A, RDS(ON) =30m(typ.)@VGS =2.5V provide excellent RDS(

 9.5. Size:320K  stansontech
 stn3446.pdf

STN3414 STN3414

STN3446STN3446STN3446STN3446N Channel Enhancement Mode MOSFET5.3ADESCRIPTIONDESCRIPTIONDESCRIPTIONDESCRIPTIONThe STN3446 is the N-Channel enhancement mode power field effect transistor whichis produced using high cell density, DMOS trench technology. This high density processis especially tailored to minimize on-state resistance. These devices are particularlysuited fo

 9.6. Size:396K  stansontech
 stn3456.pdf

STN3414 STN3414

STN3456STN3456STN3456STN3456N Channel Enhancement Mode MOSFET6.0ADESCRIPTIONDESCRIPTIONDESCRIPTIONDESCRIPTIONThe STN3456 is the N-Channel enhancement mode power field effect transistor whichis produced using high cell density, DMOS trench technology. This high density processis especially tailored to minimize on-state resistance. These devices are particularlysuited fo

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: MTC2804Q8 | 3SK123

 

 
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