All MOSFET. IXFH40N30 Datasheet

 

IXFH40N30 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IXFH40N30
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 300 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 40 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 177 nC
   trⓘ - Rise Time: 60 nS
   Cossⓘ - Output Capacitance: 745 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm
   Package: TO247

 IXFH40N30 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXFH40N30 Datasheet (PDF)

 ..1. Size:168K  ixys
 ixfh35n30 ixfh40n30 ixfm35n30 ixfm40n30.pdf

IXFH40N30 IXFH40N30

VDSS ID25 RDS(on)HiPerFETTMIXFH/IXFM 35 N30 300 V 35 A 100 mWPower MOSFETsIXFH 40 N30 300 V 40 A 85 mWIXFM 40 N30 300 V 40 A 88 mWN-Channel Enhancement Modetrr 200 nsHigh dv/dt, Low trr, HDMOSTM FamilySymbol Test Conditions Maximum Ratings TO-247 AD (IXFH)VDSS TJ = 25C to 150C 300 VVDGR TJ = 25C to 150C; RGS = 1 MW 300 V(TAB)VGS Continuous 20 VVGSM Trans

 0.1. Size:50K  ixys
 ixfh40n30q ixft40n30q.pdf

IXFH40N30 IXFH40N30

IXFH 40N30QHiPerFETTMVDSS = 300 VIXFT 40N30QPower MOSFETs ID25 = 40 AQ-Class RDS(on) = 80 mWtrr 250 nsN-Channel Enhancement ModeAvalanche Rated, High dv/dt, Low QgPreliminary data sheetTO-268 (IXFT) Case StyleSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 300 VVDGR TJ = 25C to 150C; RGS = 1 MW 300 VVGS Continuous 20 VG(TAB)VGSM Transie

 7.1. Size:265K  ixys
 ixft40n85xhv ixfh40n85x.pdf

IXFH40N30 IXFH40N30

Advance Technical InformationX-Class HiPerFETTM VDSS = 850VIXFT40N85XHVPower MOSFET ID25 = 40AIXFH40N85X RDS(on) 145m N-Channel Enhancement ModeAvalanche RatedTO-268HV (IXFT)Fast Intrinsic DiodeGSymbol Test Conditions Maximum RatingsSVDSS TJ = 25C to 150C 850 V D (Tab)VDGR TJ = 25C to 150C, RGS = 1M 850 VTO-

 7.2. Size:123K  ixys
 ixfh40n50q ixft40n50q.pdf

IXFH40N30 IXFH40N30

Advanced Technical InformationIXFH 40N50Q VDSS = 500 VHiPerFETTMIXFT 40N50Q ID25 = 40 APower MOSFETsRDS(on) = 0.14 Q-Class trr 250 ns N-Channel Enhancement ModeAvalanche Rated, Low Qg, High dv/dtSymbol Test Conditions Maximum Ratings TO-247 AD (IXFH)VDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C; RGS = 1 M 500

Datasheet: IXFH24N50 , IXFH26N50 , IXFH26N50Q , IXFH26N60Q , IXFH30N50 , IXFH32N50 , IXFH32N50Q , IXFH35N30 , IPSA70R360P7S , IXFH40N30Q , IXFH42N20 , IXFH4N100Q , IXFH50N20 , IXFH52N30Q , IXFH58N20 , IXFH58N20Q , IXFH60N25Q .

History: STP4N40FI

 

 
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