IXFH40N30 MOSFET Datasheet: N-Ch, 300V, 40A. Full specification with pinout and replacement list

IXFH40N30 Specs and Replacement

   Type Designator: IXFH40N30
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 300 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 40 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 60 nS
   Cossⓘ - Output Capacitance: 745 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm
   Package: TO247

IXFH40N30 substitution

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IXFH40N30 datasheet

..1. Size:168K ixys
ixfh35n30 ixfh40n30 ixfm35n30 ixfm40n30.pdf pdf_icon

VDSS ID25 RDS(on) HiPerFETTM IXFH/IXFM 35 N30 300 V 35 A 100 mW Power MOSFETs IXFH 40 N30 300 V 40 A 85 mW IXFM 40 N30 300 V 40 A 88 mW N-Channel Enhancement Mode trr 200 ns High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25 C to 150 C 300 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 300 V (TAB) VGS Continuous 20 V VGSM Trans... See More ⇒

0.1. Size:50K ixys
ixfh40n30q ixft40n30q.pdf pdf_icon

IXFH 40N30Q HiPerFETTM VDSS = 300 V IXFT 40N30Q Power MOSFETs ID25 = 40 A Q-Class RDS(on) = 80 mW trr 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Preliminary data sheet TO-268 (IXFT) Case Style Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 300 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 300 V VGS Continuous 20 V G (TAB) VGSM Transie... See More ⇒

7.1. Size:265K ixys
ixft40n85xhv ixfh40n85x.pdf pdf_icon

Advance Technical Information X-Class HiPerFETTM VDSS = 850V IXFT40N85XHV Power MOSFET ID25 = 40A IXFH40N85X RDS(on) 145m N-Channel Enhancement Mode Avalanche Rated TO-268HV (IXFT) Fast Intrinsic Diode G Symbol Test Conditions Maximum Ratings S VDSS TJ = 25 C to 150 C 850 V D (Tab) VDGR TJ = 25 C to 150 C, RGS = 1M 850 V TO-... See More ⇒

7.2. Size:123K ixys
ixfh40n50q ixft40n50q.pdf pdf_icon

Advanced Technical Information IXFH 40N50Q VDSS = 500 V HiPerFETTM IXFT 40N50Q ID25 = 40 A Power MOSFETs RDS(on) = 0.14 Q-Class trr 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M 500... See More ⇒

Detailed specifications: IXFH24N50 , IXFH26N50 , IXFH26N50Q , IXFH26N60Q , IXFH30N50 , IXFH32N50 , IXFH32N50Q , IXFH35N30 , K2611 , IXFH40N30Q , IXFH42N20 , IXFH4N100Q , IXFH50N20 , IXFH52N30Q , IXFH58N20 , IXFH58N20Q , IXFH60N25Q .