STN6303 Specs and Replacement

Type Designator: STN6303

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.35 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 23 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 34 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm

Package: SOT-363

STN6303 substitution

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STN6303 datasheet

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STN6303

STN6303 Dual N Channel Enhancement Mode MOSFET 1.0A DESCRIPTION STN6303 is the dual N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low volta... See More ⇒

Detailed specifications: STN4828, STN4842, STN484D, STN4850, STN4920, STN4946, STN4972, STN5PF02V, 2SK3878, STN6562, STN7400, STN80T08, STN8822, STN8822A, STN8882D, STP100N10F7, STP100N8F6

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