All MOSFET. STN6303 Datasheet

 

STN6303 Datasheet and Replacement


   Type Designator: STN6303
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 23 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 34 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
   Package: SOT-363
 

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STN6303 Datasheet (PDF)

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STN6303

STN6303 Dual N Channel Enhancement Mode MOSFET 1.0ADESCRIPTION STN6303 is the dual N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low volta

Datasheet: STN4828 , STN4842 , STN484D , STN4850 , STN4920 , STN4946 , STN4972 , STN5PF02V , IRFP260 , STN6562 , STN7400 , STN80T08 , STN8822 , STN8822A , STN8882D , STP100N10F7 , STP100N8F6 .

History: HAT1094C

Keywords - STN6303 MOSFET datasheet

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