STN8822 Specs and Replacement

Type Designator: STN8822

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 7.4 A

Tj ⓘ - Maximum Junction Temperature: 140 °C

Electrical Characteristics

tr ⓘ - Rise Time: 40 nS

Cossⓘ - Output Capacitance: 120 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm

Package: TSSOP-8

STN8822 substitution

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STN8822 datasheet

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STN8822

STN8822 Dual N Channel Enhancement Mode MOSFET 8.0A DESCRIPTION STN8822 is the dual N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, such as notebook computer... See More ⇒

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STN8822

STN8822A Dual N Channel Enhancement Mode MOSFET 6.0A DESCRIPTION STN8822A is the dual N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, such as notebook comput... See More ⇒

 9.1. Size:109K  st
 stn888.pdf pdf_icon

STN8822

STN888 HIGH CURRENT, HIGH PERFORMANCE, LOW VOLTAGE PNP TRANSISTOR Features VERY LOW COLLECTOR TO EMITTER SATURATION VOLTAGE D.C. CURRENT GAING, hFE > 100 5 A CONTINUOUS COLLECTOR CURRENT 2 SOT-223 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS 3 2 1 AVAILABLE IN TAPE & REEL PACKING IN COMPLIANCE WITH THE 2002/93/EC SOT-223 EUROPEAN DIRECTIVE Applicatio... See More ⇒

 9.2. Size:759K  stansontech
 stn8882d.pdf pdf_icon

STN8822

STN8882D N Channel Enhancement Mode MOSFET 80.0A DESCRIPTION STN8882D is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The STN8882D has been designed specially to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been ... See More ⇒

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Detailed specifications: STN4920, STN4946, STN4972, STN5PF02V, STN6303, STN6562, STN7400, STN80T08, IRF4905, STN8822A, STN8882D, STP100N10F7, STP100N8F6, STP1013, STP105N3LL, STP10N105K5, STP10N60M2

Keywords - STN8822 MOSFET specs

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