STN8822 Dual N Channel Enhancement Mode MOSFET 8.0A DESCRIPTION STN8822 is the dual N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, such as notebook computer

STN8822A Dual N Channel Enhancement Mode MOSFET 6.0A DESCRIPTION STN8822A is the dual N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, such as notebook comput

STN888HIGH CURRENT, HIGH PERFORMANCE, LOW VOLTAGEPNP TRANSISTORFeatures VERY LOW COLLECTOR TO EMITTER SATURATION VOLTAGE D.C. CURRENT GAING, hFE > 100 5 A CONTINUOUS COLLECTOR CURRENT2 SOT-223 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS 321 AVAILABLE IN TAPE & REEL PACKING IN COMPLIANCE WITH THE 2002/93/EC SOT-223EUROPEAN DIRECTIVEApplicatio

STN8882D N Channel Enhancement Mode MOSFET 80.0A DESCRIPTION STN8882D is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The STN8882D has been designed specially to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been