STP10N105K5 Datasheet. Specs and Replacement
Type Designator: STP10N105K5 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 130 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1050 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 30 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.3 Ohm
Package: TO-220
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STP10N105K5 datasheet
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INCHANGE Semiconductor Isc N-Channel MOSFET Transistor STP10NK60ZFP FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATIN... See More ⇒
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Detailed specifications: STN80T08, STN8822, STN8822A, STN8882D, STP100N10F7, STP100N8F6, STP1013, STP105N3LL, IRLB4132, STP10N60M2, STP10N65K3, STP10N95K5, STP10NK50Z, STP10NK60ZFP, STP10P6F6, STP110N10F7, STP110N55F6
Keywords - STP10N105K5 MOSFET specs
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