STP110N10F7 Datasheet and Replacement

STF110N10F7, STP110N10F7N-channel 100 V, 5.1 m typ., 110 A, STripFET VII DeepGATE Power MOSFETs in TO-220FP and TO-220 packagesDatasheet - production dataFeatures Order codes VDS RDS(on) max ID PTOTSTF110N10F7 45 A 30 WTAB100 V 0.007 STP110N10F7 110 A 150 W Ultra low on-resistance3 32 21 1 100% avalanche testedTO-220FP TO-220Applications Sw

STP110N7F6N-channel 68 V, 0.0055 typ., 110 A, STripFET F6 Power MOSFET in a TO-220 packageDatasheet - production dataFeaturesOrder code VDS RDS(on)max. ID PTOTTABSTP110N7F6 68 V 0.0065 110 A 176 W Very low on-resistance 321 Very low gate charge TO-220 High avalanche ruggedness Low gate drive power lossApplicationsFigure 1. Internal schem

STP110N8F7 N-channel 80 V, 6.4 m typ., 80 A, STripFET F7 Power MOSFET in a TO-220 package Datasheet - production data Features Order code VDS RDS(on)max ID PTOT STP110N8F7 80 V 7.5 m 80 A 170 W Among the lowest RDS(on) on the market Excellent figure of merit (FoM) Low Crss/Ciss ratio for EMI immunity High avalanche ruggedness Applications Swit

STP110N7F6N-channel 68 V, 0.0055 typ., 110 A, STripFET F6 Power MOSFET in a TO-220 packageDatasheet - production dataFeaturesOrder code VDS RDS(on)max. ID PTOTTABSTP110N7F6 68 V 0.0065 110 A 176 W Very low on-resistance 321 Very low gate charge TO-220 High avalanche ruggedness Low gate drive power lossApplicationsFigure 1. Internal schem

STP110N8F6N-channel 80 V, 0.0056 typ.,110 A, STripFET F6 Power MOSFET in a TO-220 packageDatasheet - production dataFeaturesOrder code VDS RDS(on)max ID PTOTTABSTP110N8F6 80 V 0.0065 110 A 200 W Very low on-resistance 321 Very low gate charge TO-220 High avalanche ruggedness Low gate drive power lossApplicationsFigure 1. Internal schemat

STP110N55F6N-channel 55 V, 4.5 typ., 110 A STripFET F6 Power MOSFET in a TO-220 packageDatasheet - production dataFeatures Order code VDS RDS(on) max. IDTABSTP110N55F6 55 V 5.2 m 110 A Low gate charge Very low on-resistance321 High avalanche ruggednessTO-220Applications Switching applicationsDescriptionFigure 1. Internal schematic diagr

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor STP110N8F6FEATURESVery low on-resistanceVery low gate chargeHigh avalanche ruggednessLow gate drive power loss100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMET