STP110N10F7 - описание и поиск аналогов

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 stf110n10f7 stp110n10f7.pdf 

STF110N10F7, STP110N10F7 N-channel 100 V, 5.1 m typ., 110 A, STripFET VII DeepGATE Power MOSFETs in TO-220FP and TO-220 packages Datasheet - production data Features Order codes VDS RDS(on) max ID PTOT STF110N10F7 45 A 30 W TAB 100 V 0.007 STP110N10F7 110 A 150 W Ultra low on-resistance 3 3 2 2 1 1 100% avalanche tested TO-220FP TO-220 Applications Sw

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 stp110n7f6.pdf 

STP110N7F6 N-channel 68 V, 0.0055 typ., 110 A, STripFET F6 Power MOSFET in a TO-220 package Datasheet - production data Features Order code VDS RDS(on)max. ID PTOT TAB STP110N7F6 68 V 0.0065 110 A 176 W Very low on-resistance 3 2 1 Very low gate charge TO-220 High avalanche ruggedness Low gate drive power loss Applications Figure 1. Internal schem

 7.2. Size:681K  st
 stp110n8f7.pdf 

STP110N8F7 N-channel 80 V, 6.4 m typ., 80 A, STripFET F7 Power MOSFET in a TO-220 package Datasheet - production data Features Order code VDS RDS(on)max ID PTOT STP110N8F7 80 V 7.5 m 80 A 170 W Among the lowest RDS(on) on the market Excellent figure of merit (FoM) Low Crss/Ciss ratio for EMI immunity High avalanche ruggedness Applications Swit

 7.3. Size:645K  st
 stp110n7f6.pdf 

STP110N7F6 N-channel 68 V, 0.0055 typ., 110 A, STripFET F6 Power MOSFET in a TO-220 package Datasheet - production data Features Order code VDS RDS(on)max. ID PTOT TAB STP110N7F6 68 V 0.0065 110 A 176 W Very low on-resistance 3 2 1 Very low gate charge TO-220 High avalanche ruggedness Low gate drive power loss Applications Figure 1. Internal schem

 7.4. Size:551K  st
 stp110n8f6.pdf 

STP110N8F6 N-channel 80 V, 0.0056 typ.,110 A, STripFET F6 Power MOSFET in a TO-220 package Datasheet - production data Features Order code VDS RDS(on)max ID PTOT TAB STP110N8F6 80 V 0.0065 110 A 200 W Very low on-resistance 3 2 1 Very low gate charge TO-220 High avalanche ruggedness Low gate drive power loss Applications Figure 1. Internal schemat

 7.5. Size:647K  st
 stp110n55f6.pdf 

STP110N55F6 N-channel 55 V, 4.5 typ., 110 A STripFET F6 Power MOSFET in a TO-220 package Datasheet - production data Features Order code VDS RDS(on) max. ID TAB STP110N55F6 55 V 5.2 m 110 A Low gate charge Very low on-resistance 3 2 1 High avalanche ruggedness TO-220 Applications Switching applications Description Figure 1. Internal schematic diagr

 7.6. Size:227K  inchange semiconductor
 stp110n8f6.pdf 

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor STP110N8F6 FEATURES Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMET