STP110N8F6 Specs and Replacement
Type Designator: STP110N8F6
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 200 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 110 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 61 nS
Cossⓘ - Output Capacitance: 320 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
Package: TO-220
STP110N8F6 substitution
- MOSFET ⓘ Cross-Reference Search
STP110N8F6 datasheet
stp110n8f6.pdf
STP110N8F6 N-channel 80 V, 0.0056 typ.,110 A, STripFET F6 Power MOSFET in a TO-220 package Datasheet - production data Features Order code VDS RDS(on)max ID PTOT TAB STP110N8F6 80 V 0.0065 110 A 200 W Very low on-resistance 3 2 1 Very low gate charge TO-220 High avalanche ruggedness Low gate drive power loss Applications Figure 1. Internal schemat... See More ⇒
stp110n8f6.pdf
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor STP110N8F6 FEATURES Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMET... See More ⇒
stp110n8f7.pdf
STP110N8F7 N-channel 80 V, 6.4 m typ., 80 A, STripFET F7 Power MOSFET in a TO-220 package Datasheet - production data Features Order code VDS RDS(on)max ID PTOT STP110N8F7 80 V 7.5 m 80 A 170 W Among the lowest RDS(on) on the market Excellent figure of merit (FoM) Low Crss/Ciss ratio for EMI immunity High avalanche ruggedness Applications Swit... See More ⇒
stp110n7f6.pdf
STP110N7F6 N-channel 68 V, 0.0055 typ., 110 A, STripFET F6 Power MOSFET in a TO-220 package Datasheet - production data Features Order code VDS RDS(on)max. ID PTOT TAB STP110N7F6 68 V 0.0065 110 A 176 W Very low on-resistance 3 2 1 Very low gate charge TO-220 High avalanche ruggedness Low gate drive power loss Applications Figure 1. Internal schem... See More ⇒
Detailed specifications: STP10N60M2, STP10N65K3, STP10N95K5, STP10NK50Z, STP10NK60ZFP, STP10P6F6, STP110N10F7, STP110N55F6, IRF530, STP11N65M2, STP11N65M5, STP11NM60A, STP11NM60FDFP, STP11NM60FP, STP11NM60N, STP11NM65N, STP120NH03L
Keywords - STP110N8F6 MOSFET specs
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