All MOSFET. STP110N8F6 Datasheet

 

STP110N8F6 Datasheet and Replacement


   Type Designator: STP110N8F6
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 200 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 110 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 61 nS
   Cossⓘ - Output Capacitance: 320 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
   Package: TO-220
 

 STP110N8F6 substitution

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STP110N8F6 Datasheet (PDF)

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STP110N8F6

STP110N8F6N-channel 80 V, 0.0056 typ.,110 A, STripFET F6 Power MOSFET in a TO-220 packageDatasheet - production dataFeaturesOrder code VDS RDS(on)max ID PTOTTABSTP110N8F6 80 V 0.0065 110 A 200 W Very low on-resistance 321 Very low gate charge TO-220 High avalanche ruggedness Low gate drive power lossApplicationsFigure 1. Internal schemat

 ..2. Size:227K  inchange semiconductor
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STP110N8F6

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor STP110N8F6FEATURESVery low on-resistanceVery low gate chargeHigh avalanche ruggednessLow gate drive power loss100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMET

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STP110N8F6

STP110N8F7 N-channel 80 V, 6.4 m typ., 80 A, STripFET F7 Power MOSFET in a TO-220 package Datasheet - production data Features Order code VDS RDS(on)max ID PTOT STP110N8F7 80 V 7.5 m 80 A 170 W Among the lowest RDS(on) on the market Excellent figure of merit (FoM) Low Crss/Ciss ratio for EMI immunity High avalanche ruggedness Applications Swit

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STP110N8F6

STP110N7F6N-channel 68 V, 0.0055 typ., 110 A, STripFET F6 Power MOSFET in a TO-220 packageDatasheet - production dataFeaturesOrder code VDS RDS(on)max. ID PTOTTABSTP110N7F6 68 V 0.0065 110 A 176 W Very low on-resistance 321 Very low gate charge TO-220 High avalanche ruggedness Low gate drive power lossApplicationsFigure 1. Internal schem

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , 7N65 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

Keywords - STP110N8F6 MOSFET datasheet

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