STP11NM60A Specs and Replacement

Type Designator: STP11NM60A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 110 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 11 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 248 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.45 Ohm

Package: TO-220

STP11NM60A substitution

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STP11NM60A datasheet

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stp11nm60a stp11nm60afp stb11nm60a-1.pdf pdf_icon

STP11NM60A

STP11NM60A STP11NM60AFP - STB11NM60A-1 N-CHANNEL 600V - 0.4 - 11A TO-220/TO-220FP/I2PAK MDmesh Power MOSFET TYPE VDSS RDS(on) ID STP11NM60A 600 V ... See More ⇒

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stp11nm60a.pdf pdf_icon

STP11NM60A

STP11NM60A STP11NM60AFP - STB11NM60A-1 N-CHANNEL 600V - 0.4 - 11A TO-220/TO-220FP/I2PAK MDmesh Power MOSFET TYPE VDSS RDS(on) ID STP11NM60A 600 V ... See More ⇒

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stb11nm60t4 stp11nm60.pdf pdf_icon

STP11NM60A

STB11NM60T4, STP11NM60 Datasheet N-channel 600 V, 0.4 typ., 11 A, MDmesh II Power MOSFETs in D PAK and TO-220 packages Features VDSS TAB RDS(on) max. ID TAB Order codes Package (@ TJmax) STB11NM60T4 D PAK 3 650 V 0.45 11 A 1 3 2 STP11NM60 TO-220 D PAK TO-220 2 1 100% avalanche tested Low input capacitance and gate charge Low gate input resistance D(2... See More ⇒

 5.2. Size:486K  st
stb11nm60fd-1 stb11nm60fdt4 stp11nm60fdfp.pdf pdf_icon

STP11NM60A

STB11NM60FD - STB11NM60FD-1 STP11NM60FD - STP11NM60FDFP N-channel 600V - 0.40 - 11A - TO-220/TO-220FP/D2PAK/I2PAK FDmesh Power MOSFET (with fast diode) General features Type VDSS RDS(on) ID 3 2 3 STB11NM60FD 600V ... See More ⇒

Detailed specifications: STP10NK50Z, STP10NK60ZFP, STP10P6F6, STP110N10F7, STP110N55F6, STP110N8F6, STP11N65M2, STP11N65M5, AON7506, STP11NM60FDFP, STP11NM60FP, STP11NM60N, STP11NM65N, STP120NH03L, STP12N50M2, STP12N60M2, STP12NM50FD

Keywords - STP11NM60A MOSFET specs

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