STP11NM60A Specs and Replacement
Type Designator: STP11NM60A
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 110 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 11 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 248 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.45 Ohm
Package: TO-220
STP11NM60A substitution
- MOSFET ⓘ Cross-Reference Search
STP11NM60A datasheet
stp11nm60a stp11nm60afp stb11nm60a-1.pdf
STP11NM60A STP11NM60AFP - STB11NM60A-1 N-CHANNEL 600V - 0.4 - 11A TO-220/TO-220FP/I2PAK MDmesh Power MOSFET TYPE VDSS RDS(on) ID STP11NM60A 600 V ... See More ⇒
stp11nm60a.pdf
STP11NM60A STP11NM60AFP - STB11NM60A-1 N-CHANNEL 600V - 0.4 - 11A TO-220/TO-220FP/I2PAK MDmesh Power MOSFET TYPE VDSS RDS(on) ID STP11NM60A 600 V ... See More ⇒
stb11nm60t4 stp11nm60.pdf
STB11NM60T4, STP11NM60 Datasheet N-channel 600 V, 0.4 typ., 11 A, MDmesh II Power MOSFETs in D PAK and TO-220 packages Features VDSS TAB RDS(on) max. ID TAB Order codes Package (@ TJmax) STB11NM60T4 D PAK 3 650 V 0.45 11 A 1 3 2 STP11NM60 TO-220 D PAK TO-220 2 1 100% avalanche tested Low input capacitance and gate charge Low gate input resistance D(2... See More ⇒
stb11nm60fd-1 stb11nm60fdt4 stp11nm60fdfp.pdf
STB11NM60FD - STB11NM60FD-1 STP11NM60FD - STP11NM60FDFP N-channel 600V - 0.40 - 11A - TO-220/TO-220FP/D2PAK/I2PAK FDmesh Power MOSFET (with fast diode) General features Type VDSS RDS(on) ID 3 2 3 STB11NM60FD 600V ... See More ⇒
Detailed specifications: STP10NK50Z, STP10NK60ZFP, STP10P6F6, STP110N10F7, STP110N55F6, STP110N8F6, STP11N65M2, STP11N65M5, AON7506, STP11NM60FDFP, STP11NM60FP, STP11NM60N, STP11NM65N, STP120NH03L, STP12N50M2, STP12N60M2, STP12NM50FD
Keywords - STP11NM60A MOSFET specs
STP11NM60A cross reference
STP11NM60A equivalent finder
STP11NM60A pdf lookup
STP11NM60A substitution
STP11NM60A replacement
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