STP11NM60A
Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: STP11NM60A
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 110
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30
V
|Id| ⓘ - Максимально
допустимый постоянный ток стока: 11
A
Tj ⓘ - Максимальная температура канала: 150
°C
tr ⓘ -
Время нарастания: 15
ns
Cossⓘ - Выходная емкость: 248
pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.45
Ohm
Тип корпуса:
TO-220
Аналог (замена) для STP11NM60A
-
подбор ⓘ MOSFET транзистора по параметрам
STP11NM60A
Datasheet (PDF)
..2. Size:249K st
stp11nm60a.pdf 

STP11NM60ASTP11NM60AFP - STB11NM60A-1N-CHANNEL 600V - 0.4 - 11A TO-220/TO-220FP/I2PAKMDmeshPower MOSFETTYPE VDSS RDS(on) IDSTP11NM60A 600 V
5.1. Size:624K st
stb11nm60t4 stp11nm60.pdf 

STB11NM60T4, STP11NM60DatasheetN-channel 600 V, 0.4 typ., 11 A, MDmesh II Power MOSFETs in DPAK and TO-220 packagesFeaturesVDSSTABRDS(on) max. IDTAB Order codes Package(@ TJmax)STB11NM60T4 DPAK3650 V 0.45 11 A132 STP11NM60 TO-220D PAK TO-220 21 100% avalanche tested Low input capacitance and gate charge Low gate input resistanceD(2
5.2. Size:486K st
stb11nm60fd-1 stb11nm60fdt4 stp11nm60fdfp.pdf 

STB11NM60FD - STB11NM60FD-1STP11NM60FD - STP11NM60FDFPN-channel 600V - 0.40 - 11A - TO-220/TO-220FP/D2PAK/I2PAKFDmesh Power MOSFET (with fast diode)General featuresType VDSS RDS(on) ID32 3STB11NM60FD 600V
5.3. Size:349K st
stp11nm60fd.pdf 

STP11NM60FDSTP11NM60FDFP - STB11NM60FD-1N-CHANNEL 600V - 0.40 - 11A TO-220 / TO-220FP/I2PAKFDmeshPower MOSFET (with FAST DIODE)TYPE VDSS RDS(on) IDSTP11NM60FD 600 V
5.4. Size:493K st
stb11nm60fd stb11nm60fd-1 stp11nm60fd stp11nm60fdfp.pdf 

STB11NM60FD - STB11NM60FD-1STP11NM60FD - STP11NM60FDFPN-channel 600V - 0.40 - 11A - TO-220/TO-220FP/D2PAK/I2PAKFDmesh Power MOSFET (with fast diode)General featuresType VDSS RDS(on) ID32 3STB11NM60FD 600V
5.5. Size:632K st
stb11nm60n-1 std11nm60n-1 std11nm60n stf11nm60n stf11nm60n stp11nm60n.pdf 

STx11NM60NN-channel 600 V, 0.37 , 10 A MDmesh II Power MOSFETTO-220, TO-220FP, I2PAK, IPAK, DPAK, D2PAKFeaturesVDSS RDS(on) 3Type ID 323(@TJmax) max12 11STB11NM60N-1 650 V 0.45 10 ADPAKTO-220IPAKSTB11NM60N 650 V 0.45 10 ASTD11NM60N 650 V 0.45 10 ASTD11NM60N-1 650 V 0.45 10 ASTF11NM60N 650 V 0.45 10 A(1)STP11NM60N 650 V 0.45
5.6. Size:632K st
stp11nm60n stb11nm60n std11nm60n stf11nm60n.pdf 

STx11NM60NN-channel 600 V, 0.37 , 10 A MDmesh II Power MOSFETTO-220, TO-220FP, I2PAK, IPAK, DPAK, D2PAKFeaturesVDSS RDS(on) 3Type ID 323(@TJmax) max12 11STB11NM60N-1 650 V 0.45 10 ADPAKTO-220IPAKSTB11NM60N 650 V 0.45 10 ASTD11NM60N 650 V 0.45 10 ASTD11NM60N-1 650 V 0.45 10 ASTF11NM60N 650 V 0.45 10 A(1)STP11NM60N 650 V 0.45
5.7. Size:635K st
stp11nm60n stf11nm60n std11nm60n stb11nm60n.pdf 

STx11NM60NN-channel 600 V, 0.37 , 10 A MDmesh II Power MOSFETTO-220, TO-220FP, I2PAK, IPAK, DPAK, D2PAKFeaturesVDSS RDS(on) 3Type ID 323(@TJmax) max12 11STB11NM60N-1 650 V 0.45 10 ADPAKTO-220IPAKSTB11NM60N 650 V 0.45 10 ASTD11NM60N 650 V 0.45 10 ASTD11NM60N-1 650 V 0.45 10 ASTF11NM60N 650 V 0.45 10 A(1)STP11NM60N 650 V 0.45
5.8. Size:360K st
stb11nm60-1 stb11nm60t4 stp11nm60fp.pdf 

STP11NM60 - STP11NM60FPSTB11NM60 - STB11NM60-1N-channel 650V @ TJmax - 0.4 - 11A TO-220/FP/D2PAK/I2PAKMDmesh Power MOSFETGeneral featuresVDSSType RDS(on) ID(@TJ=TJmax)332211STP11NM60 650V
5.9. Size:750K st
std11nm60nd stf11nm60nd sti11nm60nd stp11nm60nd stu11nm60nd.pdf 

STD11NM60ND, STF/I11NM60NDSTP11NM60ND, STU11NM60NDN-channel 600 V, 0.37 , 10 A, FDmesh II Power MOSFETI2PAK, TO-220, TO-220FP, IPAK, DPAKFeatures Order codes VDSS (@Tjmax) RDS(on) max ID33STD11NM60ND 10 A 1 21STF11NM60ND 10 A(1)DPAKIPAKSTI11NM60ND 650 V
5.10. Size:367K st
stp11nm60 stp11nm60fp stb11nm60 stb11nm60-1.pdf 

STP11NM60 - STP11NM60FPSTB11NM60 - STB11NM60-1N-channel 650V @ TJmax - 0.4 - 11A TO-220/FP/D2PAK/I2PAKMDmesh Power MOSFETGeneral featuresVDSSType RDS(on) ID(@TJ=TJmax)332211STP11NM60 650V
5.11. Size:205K inchange semiconductor
stp11nm60.pdf 

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor STP11NM60FEATURESTypical R (on)=0.4DSLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNI
Другие MOSFET... STP10NK50Z
, STP10NK60ZFP
, STP10P6F6
, STP110N10F7
, STP110N55F6
, STP110N8F6
, STP11N65M2
, STP11N65M5
, IRFP250
, STP11NM60FDFP
, STP11NM60FP
, STP11NM60N
, STP11NM65N
, STP120NH03L
, STP12N50M2
, STP12N60M2
, STP12NM50FD
.
History: MSU11N50Q
| 6N65KG-TF3-T
| UT30P04