STP130N10F3 Datasheet and Replacement
Type Designator: STP130N10F3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 250 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 120 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 38 nS
Cossⓘ - Output Capacitance: 373 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0096 Ohm
Package: TO-220
- MOSFET Cross-Reference Search
STP130N10F3 Datasheet (PDF)
stf130n10f3 stfi130n10f3 sth130n10f3-2 stp130n10f3.pdf

STF130N10F3, STFI130N10F3,STH130N10F3-2, STP130N10F3N-channel 100 V, 7.8 m typ., 120 A STripFETIII Power MOSFET in TO-220FP, IPAKFP, HPAK-2 and TO-220 packagesDatasheet production dataFeaturesRDS(on) Order codes VDSS max. ID3STF130N10F3219.6 m 46 A12STFI130N10F3 3TO-220FP100 VIPAKFPSTH130N10F3-2 9.3 mTAB120 ASTP130N10F3 9.6 m TAB
stp130nh02l.pdf

STP130NH02LN-channel 24V - 0.0034 - 120A - TO-220STripFET Power MOSFET for DC-DC conversionFeaturesType VDSS RDS(on) IDSTP130NH02L 24V
stp130n6f7.pdf

STP130N6F7 N-channel 60 V, 4.2 m typ., 80 A STripFET F7 Power MOSFET in a TO-220 package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOTSTP130N6F7 60 V 5.0 m 80 A 160 W Among the lowest RDS(on) on the market Excellent figure of merit (FoM) Low Crss/Ciss ratio for EMI immunity High avalanche ruggedness Applications
stp130ns04zb stb130ns04zb stw130ns04zb stb130ns04zb-1.pdf

STP130NS04ZB - STB130NS04ZB-1STB130NS04ZB - STW130NS04ZBN-channel clamped - 7 m - 80A TO-220/I2/D2PAK/TO-247Fully protected mesh overlay MOSFETGeneral featuresType VDSS RDS(on) IDSTP130NS04ZB clamped
Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
History: MCH3484 | DMN30H4D0L
Keywords - STP130N10F3 MOSFET datasheet
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History: MCH3484 | DMN30H4D0L



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