STP150NF04 Specs and Replacement
Type Designator: STP150NF04
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 80 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 150 nS
Cossⓘ - Output Capacitance: 1145 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
Package: TO-220
STP150NF04 substitution
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STP150NF04 datasheet
stp150nf04.pdf
STP150NF04 N-channel 40 V, 0.005 typ., 80 A STripFET II Power MOSFET in a TO-220 package Datasheet production data Features RDS(on) Type VDSS ID TAB max STP150NF04 40 V ... See More ⇒
stb150nf04 stp150nf04.pdf
STB150NF04 STP150NF04 N-channel 40 V, 0.005 , 80 A, TO-220, D2PAK STripFET II Power MOSFET Features RDS(on) Type VDSS ID max STB150NF04 40 V ... See More ⇒
stb150nf55 stp150nf55 stw150nf55.pdf
STB150NF55 STP150NF55 - STW150NF55 N-channel 55V - 0.005 - 120A - D2PAK/TO-220/TO-247 STripFET II Power MOSFET General features Type VDSS RDS(on) ID STB150NF55 55V ... See More ⇒
std150n3llh6 stp150n3llh6 stu150n3llh6.pdf
STD150N3LLH6 STP150N3LLH6, STU150N3LLH6 N-channel 30 V, 0.0024 , 80 A, DPAK, IPAK, TO-220 STripFET VI DeepGATE Power MOSFET Features Type VDSS RDS(on) max ID STD150N3LLH6 30 V 0.0028 80 A 3 3 2 STP150N3LLH6 30 V 0.0033 80 A 1 1 STu150N3LLH6 30 V 0.0033 80 A IPAK DPAK RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) 3 2 Hi... See More ⇒
Detailed specifications: STP13NM50N, STP13NM60ND, STP140N8F7, STP1413A, STP1433A, STP14NK50ZFP, STP14NK60ZFP, STP150N10F7, AO3400A, STP15N65M5, STP15N80K5, STP15N95K5, STP15NK50ZFP, STP15NM60N, STP160N3LL, STP160N4LF6, STP16N50M2
Keywords - STP150NF04 MOSFET specs
STP150NF04 cross reference
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History: AP4424GM-HF | P4404EI
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