STP18N65M2 MOSFET. Datasheet pdf. Equivalent
Type Designator: STP18N65M2
Marking Code: 18N65M2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 110 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 12 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 20 nC
trⓘ - Rise Time: 7.5 nS
Cossⓘ - Output Capacitance: 35 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.33 Ohm
Package: TO-220
STP18N65M2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STP18N65M2 Datasheet (PDF)
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