2SJ483 Datasheet: MOSFET, P-Ch, 30V, 5A. Full specification with pinout and replacement list

2SJ483 Datasheet. Specs and Replacement

Type Designator: 2SJ483 📄📄

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.9 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|VGSoff|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 1 V

tr ⓘ - Rise Time: 70 nS

Cossⓘ - Output Capacitance: 390 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm

Package: TO92M

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2SJ483 datasheet

..1. Size:47K 1
2sj483.pdf pdf_icon

2SJ483 Silicon P Channel MOS FET High Speed Power Switching ADE-208-519 1st. Edition Features Low on-resistance RDS(on) = 0.08 typ (at VGS = 10 V, ID = 2.5 A) 4V gate drive devices. Large current capacitance ID = 5 A Outline TO-92MOD. D G 1. Source 3 2 2. Drain 1 3. Gate S 2SJ483 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Dra... See More ⇒

9.1. Size:43K sanyo
2sj485.pdf pdf_icon

Ordering number ENN6434 P-Channel Silicon MOSFET 2SJ485 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2083B 4V drive. [2SJ485] 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 0.6 0.5 1 Gate 2 Drain 1 2 3 3 Source 4 Drain 2.3 2.3 SANYO TP unit mm 2092B [2SJ485] 6.5 2.3 5.0 0.5 4 0.5 ... See More ⇒

9.2. Size:92K renesas
rej03g0868 2sj484ds.pdf pdf_icon

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

9.3. Size:79K renesas
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2SJ484 Silicon P Channel MOS FET REJ03G0868-0300 (Previous ADE-208-501A) Rev.3.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance RDS (on) = 0.18 typ. (at VGS = 10 V, ID = 1 A) Low drive current High speed switching 4 V gate drive devices. Outline RENESAS Package code PLZZ0004CA-A R (Package name UPAK ) ... See More ⇒