All MOSFET. STP2305 Datasheet

 

STP2305 MOSFET. Datasheet pdf. Equivalent


   Type Designator: STP2305
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2 V
   |Id|ⓘ - Maximum Drain Current: 4.3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 6.5 nC
   trⓘ - Rise Time: 16.8 nS
   Cossⓘ - Output Capacitance: 290 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
   Package: SOT-23

 STP2305 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STP2305 Datasheet (PDF)

 ..1. Size:374K  semtron
stp2305.pdf

STP2305
STP2305

STP2305 -30V P-Channel Enhancement Mode MOSFETDESCRIPTIONFEATUREThe STP2305 is the P-Channel logic enhancement -30V/-4.3A, RDS(ON) =55m(typ.)@VGS =-10V mode power field effect transistor is produced using -30V/-3.5A, RDS(ON) =65m(typ.)@VGS =-4.5V high cell density. advanced trench technology to -30V/-2.5A, RDS(ON) =87m(typ.)@VGS =-2.5V provide exce

 8.1. Size:371K  semtron
stp2301.pdf

STP2305
STP2305

STP2301 -20V P-Channel Enhancement Mode MOSFETDESCRIPTIONFEATUREThe STP2301 is the P-Channel logic enhancement -20V/-3.0A, RDS(ON) =80m(typ.)@VGS =-4.5V mode power field effect transistor is produced using -20V/-2.0A, RDS(ON) =105m(typ.)@VGS =-2.5V high cell density. advanced trench technology to provide excellent RDS(ON). .low gate charge and Super h

 9.1. Size:560K  st
stb23nm60n stf23nm60n sti23nm60n stp23nm60n stw23nm60n.pdf

STP2305
STP2305

STB23NM60N-STF23NM60NSTI23NM60N-STP23NM60N-STW23NM60NN-channel 600 V - 0.150 - 19 A - D2PAK - I2PAK - TO-220/FPTO-247, second generation MDmesh Power MOSFETFeaturesVDSS RDS(on) Type ID3(@Tjmax) max31 21STB23NM60N 19 ADPAKIPAKSTI23NM60N 19 A3STF23NM60N 650 V 0.180 19 A (1)21STP23NM60N 19 ATO-247STW23NM60N 19 A3 32 21 11. Limited

 9.2. Size:814K  st
stb23nm60nd sti23nm60nd stf23nm60nd stp23nm60nd stw23nm60nd.pdf

STP2305
STP2305

STx23NM60NDN-channel 600 V, 0.150 , 19.5 A, FDmesh II Power MOSFET(with fast diode) DPAK, IPAK, TO-220, TO-220FP, TO-247FeaturesVDSS RDS(on) Type ID3max.3(@Tjmax)1 21STx23NM60ND 650 V

 9.3. Size:558K  st
stb23nm60n stf23nm60n sti23nm60n stp23nm60n stw23nm60n.pdf

STP2305
STP2305

STB23NM60N-STF23NM60NSTI23NM60N-STP23NM60N-STW23NM60NN-channel 600 V - 0.150 - 19 A - D2PAK - I2PAK - TO-220/FPTO-247, second generation MDmesh Power MOSFETFeaturesVDSS RDS(on) Type ID3(@Tjmax) max31 21STB23NM60N 19 ADPAKIPAKSTI23NM60N 19 A3STF23NM60N 650 V 0.180 19 A (1)21STP23NM60N 19 ATO-247STW23NM60N 19 A3 32 21 11. Limited

 9.4. Size:716K  st
stp23n80k5.pdf

STP2305
STP2305

STP23N80K5 N-channel 800 V, 0.23 typ., 16 A MDmesh K5 Power MOSFET in a TO-220 package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOTSTP23N80K5 800 V 0.28 16 A 190 W Industrys lowest R x area DS(on) Industrys best figure of merit (FoM) Ultra low gate charge 100% avalanche tested Zener-protected Applicat

 9.5. Size:757K  st
stb23nm50n stf23nm50n stp23nm50n stw23nm50n.pdf

STP2305
STP2305

STB23NM50N, STF23NM50NSTP23NM50N, STW23NM50NN-channel 500 V, 0.162 , 17 A TO-220, TO-220FP, TO-247, D2PAKMDmesh II Power MOSFETFeaturesVDSS RDS(on) Type ID(@Tjmax) max33221STB23NM50N1TO-220FP TO-220STF23NM50N550 V

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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