STP300NH02L Datasheet and Replacement

   Type Designator: STP300NH02L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 24 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 120 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 275 nS
   Cossⓘ - Output Capacitance: 3251 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0022 Ohm
   Package: TO-220

STP300NH02L substitution

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STP300NH02L Datasheet (PDF)

..1. Size:332K st
stb300nh02l stp300nh02l.pdf pdf_icon

STB300NH02LSTP300NH02LN-channel 24V - 120A - TO-220 / D2PAKSTripFET Power MOSFETPreliminary DataFeaturesType VDSS RDS(on) Max IDSTB300NH02L 24V

..2. Size:329K st
stp300nh02l.pdf pdf_icon

STB300NH02LSTP300NH02LN-channel 24V - 120A - TO-220 / D2PAKSTripFET Power MOSFETPreliminary DataFeaturesType VDSS RDS(on) Max IDSTB300NH02L 24V

9.1. Size:88K st
stp30ne06.pdf pdf_icon

STP30NE06STP30NE06FPN - CHANNEL 60V - 0.042 - 30A - TO-220/TO-220FPSTripFET POWER MOSFETPRELIMINARY DATATYPE VDSS RDS(on) IDSTP30NE06 60 V

9.2. Size:280K st
stp3020l.pdf pdf_icon

STP3020LN - CHANNEL 30V - 0.019 - 40A - TO-220STripFET POWER MOSFETTYPE VDSS RDS(on) IDSTP3020L 30 V

9.3. Size:298K st
stp30ns15lfp.pdf pdf_icon

STP30NS15LFPN-channel 150V - 0.085 - 10A - TO-220FPMESH OVERLAY II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTP30NS15LFP 150V

9.4. Size:293K st
stp30nm30n.pdf pdf_icon

STP30NM30NN-channel 300V - 0.078 - 30A - TO-220Ultra low gate charge MDmesh II Power MOSFETFeaturesType VDSS RDS(on) IDSTP30NM30N 300V

9.5. Size:340K st
stp30ne06l.pdf pdf_icon

STP30NE06LSTP30NE06LFPN - CHANNEL 60V - 0.035 - 30A - TO-220/TO-220FPSTripFET POWER MOSFETTYPE VDSS RDS(on) IDSTP30NE06L 60 V

9.6. Size:502K st
stb30nf10 stp30nf10 stp30nf10fp.pdf pdf_icon

STB30NF10STP30NF10 - STP30NF10FPN-channel 100V - 0.038 - 35A - D2PAK/TO-220/TO-220FPLow gate charge STripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB30NF10 100V

9.7. Size:770K st
stb30nm60n stf30nm60n stp30nm60n stw30nm60n.pdf pdf_icon

STB30NM60N,STI30NM60N,STF30NM60NSTP30NM60N, STW30NM60NN-channel 600 V, 0.1 , 25 A, MDmesh II Power MOSFETTO-220, TO-220FP, TO-247, D2PAK, I2PAKFeaturesRDS(on) VDSS @ Type ID PWTJmaxmax33121STB30NM60N 650 V

9.8. Size:309K st
stp30nf20 stw30nf20.pdf pdf_icon

STP30NF20STW30NF20N-channel 200V - 0.065 - 30A - TO-220/TO-247Low gate charge STripFET Power MOSFETGeneral featuresType VDSS RDS(on) ID PTOTSTP30NF20 200V 0.075 30A 125WSTW30NF20 200V 0.075 30A 125W Gate charge minimized 3 32 21 1 100% avalanche testedTO-220TO-247 Excellent figure of merit (RDS*Qg) Very good manufactuing repeability Ver

9.9. Size:370K st
stp30n05.pdf pdf_icon

STP30N05STP30N05FIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP30N05 50 V

9.10. Size:347K st
stp30ne06l-fp.pdf pdf_icon

STP30NE06LSTP30NE06LFPN - CHANNEL 60V - 0.035 - 30A - TO-220/TO-220FPSTripFET POWER MOSFETTYPE VDSS RDS(on) IDSTP30NE06L 60 V

9.11. Size:386K st
stp30nf20 stb30nf20 stw30nf20.pdf pdf_icon

STP30NF20 - STB30NF20STW30NF20N-channel 200V - 0.065 - 30A - TO-220/TO-247/D2PAKLow gate charge STripFET Power MOSFETFeaturesType VDSS RDS(on) ID PTOTSTP30NF20 200V 0.075 30A 125WSTW30NF20 200V 0.075 30A 125W3322STB30NF20 200V 0.075 30A 125W11TO-2473 Gate charge minimized TO-2201 100% avalanche testedDPAK Excellent figure of me

9.12. Size:502K st
stb30nf10t4 stb30nf10 stp30nf10 stp30nf10fp.pdf pdf_icon

STB30NF10STP30NF10 - STP30NF10FPN-channel 100V - 0.038 - 35A - D2PAK/TO-220/TO-220FPLow gate charge STripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB30NF10 100V

9.13. Size:370K st
stp30n06.pdf pdf_icon

STP30N06STP30N06FIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP30N06 60 V

9.14. Size:618K st
stb30nm50n sti30nm50n stf30nm50n stp30nm50n stw30nm50n.pdf pdf_icon

STB30NM50N,STI30NM50N,STF30NM50NSTP30NM50N, STW30NM50NN-channel 500 V, 0.090 , 27 A MDmesh II Power MOSFETD2PAK, I2PAK, TO-220FP, TO-220, TO-247FeaturesRDS(on) VDSS Type ID(@Tjmax)max33121STB30NM50N 550 V

9.15. Size:1205K st
stb30n65m5 stf30n65m5 sti30n65m5 stp30n65m5 stw30n65m5.pdf pdf_icon

STB30N65M5, STF30N65M5, STI30N65M5STP30N65M5, STW30N65M5N-channel 650 V, 0.125 , 22 A, MDmesh V Power MOSFETD2PAK, I2PAK, TO-220FP, TO-220, TO-247FeaturesVDSS @ Type RDS(on) max IDTJMAX 33123 12STB30N65M5 710 V

9.16. Size:92K st
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STP30NE06STP30NE06FPN - CHANNEL 60V - 0.042 - 30A - TO-220/TO-220FPSTripFET POWER MOSFETPRELIMINARY DATATYPE VDSS RDS(on) IDSTP30NE06 60 V

9.17. Size:766K st
stb30nm60n sti30nm60n stf30nm60n stp30nm60n stw30nm60n.pdf pdf_icon

9.18. Size:792K st
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STx30NM60NDN-channel 600 V, 0.11 , 25 A FDmesh II Power MOSFET(with fast diode) TO-220, TO-220FP, D2PAK, I2PAK, TO-247FeaturesVDSS @TJ RDS(on) Type IDmax max3322 2STB30NM60ND 25 AI PAK11TO-247STI30NM60ND 25 ASTF30NM60ND 650 V 0.13 25 A(1)3STP30NM60ND 25 A12D PAKSTW30NM60ND 25 A1. Limited only by maximum temperature allowed32 3 T

9.19. Size:789K st
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9.20. Size:393K st
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9.21. Size:658K stansontech
stp3052d.pdf pdf_icon

STP3052D P Channel Enhancement Mode MOSFET -25.0A DESCRIPTION STP3052D is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application. Such as DC/DC converter

9.22. Size:807K cn vbsemi
stp30nf10.pdf pdf_icon

STP30NF10www.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETSV(BR)DSS (V) rDS(on) ()ID (A)Available 175 C Junction Temperature0.032 at VGS = 10 V45RoHS*100 Low Thermal Resistance Package0.035 at VGS = 4.5 V40COMPLIANTDTO-220AB GSG D STop ViewN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, u

9.23. Size:747K cn vbsemi
stp30nf20.pdf pdf_icon

STP30NF20www.VBsemi.twN-Channel 200 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETSVDS (V) RDS(on) () ID (A) Qg (Typ) 175 C Junction TemperatureRoHS0.060 at VGS = 10 V COMPLIANT 40 New Low Thermal Resistance Package200 950.070 at VGS = 6 V38.7 Compliant to RoHS Directive 2002/95/ECAPPLICATIONSTO-220AB IndustrialDG

9.24. Size:713K cn vbsemi
stp30nf10fp.pdf pdf_icon

STP30NF10FPwww.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) rDS(on) ()ID (A) 175 C Junction TemperatureRoHS0.034 at VGS = 10 V10050aCOMPLIANT Low Thermal Resistance Package 100 % Rg TestedAPPLICATIONS Isolated DC/DC ConvertersDTO-220 FULLPAKGSSDGN-Channel MOSFETABSOLUTE MA

9.25. Size:267K inchange semiconductor
stp30nf10.pdf pdf_icon

Isc N-Channel MOSFET Transistor STP30NF10FEATURESTypical R (on)=0.038DSApplication oriented characterizationEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh-efficiency DC-DC covertersMotor controlABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Dr

9.26. Size:206K inchange semiconductor
stp30nf20.pdf pdf_icon

INCHANGE Semiconductorisc N-Channel MOSFET Transistor STP30NF20FEATURESWith TO-220 packagingHigh speed switchingVery high commutation ruggednessEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSPFC stagesLCD & PDP TVPower supplySwitching applicationsABSOLUTE MAXIMU

9.27. Size:201K inchange semiconductor
stp30nf10fp.pdf pdf_icon

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor STP30NF10FPFEATURESTypical R (on)=0.038DSApplication oriented characterizationEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh-efficiency DC-DC covertersMotor controlABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL

Datasheet: STP270N4F3 , STP270N8F7 , STP28N60M2 , STP28N65M2 , STP28NM60ND , STP2N105K5 , STP2N80K5 , STP2N95K5 , 75N75 , STP3052D , STP30NM60N , STP30NM60ND , STP310N10F7 , STP315N10F7 , STP31N65M5 , STP32NM50N , STP33N60M2 .