STP300NH02L. Аналоги и основные параметры
Наименование производителя: STP300NH02L
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ
- Максимальная рассеиваемая мощность: 300 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 24 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 120 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
tr ⓘ -
Время нарастания: 275 ns
Cossⓘ - Выходная емкость: 3251 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0022 Ohm
Тип корпуса: TO-220
Аналог (замена) для STP300NH02L
- подборⓘ MOSFET транзистора по параметрам
STP300NH02L даташит
..1. Size:332K st
stb300nh02l stp300nh02l.pdf 
STB300NH02L STP300NH02L N-channel 24V - 120A - TO-220 / D2PAK STripFET Power MOSFET Preliminary Data Features Type VDSS RDS(on) Max ID STB300NH02L 24V
..2. Size:329K st
stp300nh02l.pdf 
STB300NH02L STP300NH02L N-channel 24V - 120A - TO-220 / D2PAK STripFET Power MOSFET Preliminary Data Features Type VDSS RDS(on) Max ID STB300NH02L 24V
9.1. Size:88K st
stp30ne06.pdf 
STP30NE06 STP30NE06FP N - CHANNEL 60V - 0.042 - 30A - TO-220/TO-220FP STripFET POWER MOSFET PRELIMINARY DATA TYPE VDSS RDS(on) ID STP30NE06 60 V
9.2. Size:280K st
stp3020l.pdf 
STP3020L N - CHANNEL 30V - 0.019 - 40A - TO-220 STripFET POWER MOSFET TYPE VDSS RDS(on) ID STP3020L 30 V
9.3. Size:298K st
stp30ns15lfp.pdf 
STP30NS15LFP N-channel 150V - 0.085 - 10A - TO-220FP MESH OVERLAY II Power MOSFET General features Type VDSS RDS(on) ID STP30NS15LFP 150V
9.4. Size:293K st
stp30nm30n.pdf 
STP30NM30N N-channel 300V - 0.078 - 30A - TO-220 Ultra low gate charge MDmesh II Power MOSFET Features Type VDSS RDS(on) ID STP30NM30N 300V
9.5. Size:340K st
stp30ne06l.pdf 
STP30NE06L STP30NE06LFP N - CHANNEL 60V - 0.035 - 30A - TO-220/TO-220FP STripFET POWER MOSFET TYPE VDSS RDS(on) ID STP30NE06L 60 V
9.6. Size:502K st
stb30nf10 stp30nf10 stp30nf10fp.pdf 
STB30NF10 STP30NF10 - STP30NF10FP N-channel 100V - 0.038 - 35A - D2PAK/TO-220/TO-220FP Low gate charge STripFET II Power MOSFET General features Type VDSS RDS(on) ID STB30NF10 100V
9.7. Size:770K st
stb30nm60n stf30nm60n stp30nm60n stw30nm60n.pdf 
STB30NM60N,STI30NM60N,STF30NM60N STP30NM60N, STW30NM60N N-channel 600 V, 0.1 , 25 A, MDmesh II Power MOSFET TO-220, TO-220FP, TO-247, D2PAK, I2PAK Features RDS(on) VDSS @ Type ID PW TJmax max 3 3 1 2 1 STB30NM60N 650 V
9.8. Size:309K st
stp30nf20 stw30nf20.pdf 
STP30NF20 STW30NF20 N-channel 200V - 0.065 - 30A - TO-220/TO-247 Low gate charge STripFET Power MOSFET General features Type VDSS RDS(on) ID PTOT STP30NF20 200V 0.075 30A 125W STW30NF20 200V 0.075 30A 125W Gate charge minimized 3 3 2 2 1 1 100% avalanche tested TO-220 TO-247 Excellent figure of merit (RDS*Qg) Very good manufactuing repeability Ver
9.9. Size:370K st
stp30n05.pdf 
STP30N05 STP30N05FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STP30N05 50 V
9.10. Size:347K st
stp30ne06l-fp.pdf 
STP30NE06L STP30NE06LFP N - CHANNEL 60V - 0.035 - 30A - TO-220/TO-220FP STripFET POWER MOSFET TYPE VDSS RDS(on) ID STP30NE06L 60 V
9.11. Size:386K st
stp30nf20 stb30nf20 stw30nf20.pdf 
STP30NF20 - STB30NF20 STW30NF20 N-channel 200V - 0.065 - 30A - TO-220/TO-247/D2PAK Low gate charge STripFET Power MOSFET Features Type VDSS RDS(on) ID PTOT STP30NF20 200V 0.075 30A 125W STW30NF20 200V 0.075 30A 125W 3 3 2 2 STB30NF20 200V 0.075 30A 125W 1 1 TO-247 3 Gate charge minimized TO-220 1 100% avalanche tested D PAK Excellent figure of me
9.12. Size:502K st
stb30nf10t4 stb30nf10 stp30nf10 stp30nf10fp.pdf 
STB30NF10 STP30NF10 - STP30NF10FP N-channel 100V - 0.038 - 35A - D2PAK/TO-220/TO-220FP Low gate charge STripFET II Power MOSFET General features Type VDSS RDS(on) ID STB30NF10 100V
9.13. Size:370K st
stp30n06.pdf 
STP30N06 STP30N06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STP30N06 60 V
9.14. Size:618K st
stb30nm50n sti30nm50n stf30nm50n stp30nm50n stw30nm50n.pdf 
STB30NM50N,STI30NM50N,STF30NM50N STP30NM50N, STW30NM50N N-channel 500 V, 0.090 , 27 A MDmesh II Power MOSFET D2PAK, I2PAK, TO-220FP, TO-220, TO-247 Features RDS(on) VDSS Type ID (@Tjmax) max 3 3 1 2 1 STB30NM50N 550 V
9.15. Size:1205K st
stb30n65m5 stf30n65m5 sti30n65m5 stp30n65m5 stw30n65m5.pdf 
STB30N65M5, STF30N65M5, STI30N65M5 STP30N65M5, STW30N65M5 N-channel 650 V, 0.125 , 22 A, MDmesh V Power MOSFET D2PAK, I2PAK, TO-220FP, TO-220, TO-247 Features VDSS @ Type RDS(on) max ID TJMAX 3 3 1 2 3 1 2 STB30N65M5 710 V
9.16. Size:92K st
stp30ne06-fp.pdf 
STP30NE06 STP30NE06FP N - CHANNEL 60V - 0.042 - 30A - TO-220/TO-220FP STripFET POWER MOSFET PRELIMINARY DATA TYPE VDSS RDS(on) ID STP30NE06 60 V
9.17. Size:766K st
stb30nm60n sti30nm60n stf30nm60n stp30nm60n stw30nm60n.pdf 
STB30NM60N,STI30NM60N,STF30NM60N STP30NM60N, STW30NM60N N-channel 600 V, 0.1 , 25 A, MDmesh II Power MOSFET TO-220, TO-220FP, TO-247, D2PAK, I2PAK Features RDS(on) VDSS @ Type ID PW TJmax max 3 3 1 2 1 STB30NM60N 650 V
9.18. Size:792K st
stw30nm60nd stp30nm60nd stf30nm60nd sti30nm60nd stb30nm60nd.pdf 
STx30NM60ND N-channel 600 V, 0.11 , 25 A FDmesh II Power MOSFET (with fast diode) TO-220, TO-220FP, D2PAK, I2PAK, TO-247 Features VDSS @TJ RDS(on) Type ID max max 3 3 2 2 2 STB30NM60ND 25 A I PAK 1 1 TO-247 STI30NM60ND 25 A STF30NM60ND 650 V 0.13 25 A(1) 3 STP30NM60ND 25 A 1 2 D PAK STW30NM60ND 25 A 1. Limited only by maximum temperature allowed 3 2 3 T
9.19. Size:789K st
stf30nm60nd stp30nm60nd stw30nm60nd.pdf 
STx30NM60ND N-channel 600 V, 0.11 , 25 A FDmesh II Power MOSFET (with fast diode) TO-220, TO-220FP, D2PAK, I2PAK, TO-247 Features VDSS @TJ RDS(on) Type ID max max 3 3 2 2 2 STB30NM60ND 25 A I PAK 1 1 TO-247 STI30NM60ND 25 A STF30NM60ND 650 V 0.13 25 A(1) 3 STP30NM60ND 25 A 1 2 D PAK STW30NM60ND 25 A 1. Limited only by maximum temperature allowed 3 2 3 T
9.20. Size:393K st
stp30nf20 stw30nf20 stb30nf20.pdf 
STP30NF20 - STB30NF20 STW30NF20 N-channel 200V - 0.065 - 30A - TO-220/TO-247/D2PAK Low gate charge STripFET Power MOSFET Features Type VDSS RDS(on) ID PTOT STP30NF20 200V 0.075 30A 125W STW30NF20 200V 0.075 30A 125W 3 3 2 2 STB30NF20 200V 0.075 30A 125W 1 1 TO-247 3 Gate charge minimized TO-220 1 100% avalanche tested D PAK Excellent figure of me
9.21. Size:658K stansontech
stp3052d.pdf 
STP3052D P Channel Enhancement Mode MOSFET -25.0A DESCRIPTION STP3052D is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application. Such as DC/DC converter
9.22. Size:807K cn vbsemi
stp30nf10.pdf 
STP30NF10 www.VBsemi.tw N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETS V(BR)DSS (V) rDS(on) ( )ID (A) Available 175 C Junction Temperature 0.032 at VGS = 10 V 45 RoHS* 100 Low Thermal Resistance Package 0.035 at VGS = 4.5 V 40 COMPLIANT D TO-220AB G S G D S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, u
9.23. Size:747K cn vbsemi
stp30nf20.pdf 
STP30NF20 www.VBsemi.tw N-Channel 200 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETS VDS (V) RDS(on) ( ) ID (A) Qg (Typ) 175 C Junction Temperature RoHS 0.060 at VGS = 10 V COMPLIANT 40 New Low Thermal Resistance Package 200 95 0.070 at VGS = 6 V 38.7 Compliant to RoHS Directive 2002/95/EC APPLICATIONS TO-220AB Industrial D G
9.24. Size:713K cn vbsemi
stp30nf10fp.pdf 
STP30NF10FP www.VBsemi.tw N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V(BR)DSS (V) rDS(on) ( )ID (A) 175 C Junction Temperature RoHS 0.034 at VGS = 10 V 100 50a COMPLIANT Low Thermal Resistance Package 100 % Rg Tested APPLICATIONS Isolated DC/DC Converters D TO-220 FULLPAK G S S D G N-Channel MOSFET ABSOLUTE MA
9.25. Size:267K inchange semiconductor
stp30nf10.pdf 
Isc N-Channel MOSFET Transistor STP30NF10 FEATURES Typical R (on)=0.038 DS Application oriented characterization Easy to drive 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High-efficiency DC-DC coverters Motor control ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Dr
9.26. Size:206K inchange semiconductor
stp30nf20.pdf 
INCHANGE Semiconductor isc N-Channel MOSFET Transistor STP30NF20 FEATURES With TO-220 packaging High speed switching Very high commutation ruggedness Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operationz APPLICATIONS PFC stages LCD & PDP TV Power supply Switching applications ABSOLUTE MAXIMU
9.27. Size:201K inchange semiconductor
stp30nf10fp.pdf 
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor STP30NF10FP FEATURES Typical R (on)=0.038 DS Application oriented characterization Easy to drive 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High-efficiency DC-DC coverters Motor control ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL
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