STP31N65M5 MOSFET. Datasheet pdf. Equivalent
Type Designator: STP31N65M5
Marking Code: 31N65M5
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 22 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 45 nC
trⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 45 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.148 Ohm
Package: TO-220
STP31N65M5 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STP31N65M5 Datasheet (PDF)
stb31n65m5 stf31n65m5 stp31n65m5 stw31n65m5.pdf
STB31N65M5, STF31N65M5STP31N65M5, STW31N65M5DatasheetN-channel 650 V, 0.124 , 22 A, MDmesh M5 Power MOSFETs in D2PAK, TO220FP, TO220 and TO-247 packagesFeaturesTABVDS @ TJMAX RDS(on ) max. IDOrder code Package3132STB31N65M5D2PAKD PAK 21TO-220FPSTF31N65M5 TO-220FPTAB710 V 0.148 22 ASTP31N65M5 TO-220STW31N65M5 TO-247332TO-220 2TO-24
stb31n65m5 stf31n65m5 stfi31n65m5 stp31n65m5 stw31n65m5.pdf
STB31N65M5, STF31N65M5, STFI31N65M5, STP31N65M5, STW31N65M5N-channel 650 V, 0.124 typ., 22 A MDmesh V Power MOSFET in D2PAK, TO-220FP, I2PakFP, TO-220 and TO-247 packagesDatasheet - production dataFeaturesTABOrder codes VDSS @ TJmax RDS(on) max ID231STB31N65M53TAB 2D2PAK1STF31N65M5TO-220FPSTFI31N65M5 710 V
stp310n10f7.pdf
STP310N10F7N-channel 100 V, 2.3 m typ., 180 A STripFET VII DeepGATE Power MOSFET in a TO-220 packageDatasheet - production dataFeaturesVDS RDS(on) max. IDOrder codeTABSTP310N10F7 100 V 2.7 m 180 A Ultra low on-resistance 100% avalanche tested321ApplicationsTO-220 Switching applicationsDescriptionFigure 1. Internal schematic diagramThis de
stp315n10f7.pdf
STP315N10F7Automotive-grade N-channel 100 V, 2.3 m typ., 180 A STripFET F7 Power MOSFET in a TO-220 packageDatasheet - production dataFeaturesVDS RDS(on) max. IDOrder codeTABSTP315N10F7 100 V 2.7 m 180 A Designed for automotive applications and AEC-Q101 qualified32 Among the lowest RDS(on) on the market1 Excellent figure of merit (FoM)TO-220
stp315n10f7.pdf
isc N-Channel MOSFET Transistor STP315N10F7FEATURESDrain Current : I = 180A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 2.7m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand s
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: PTP20N65A
