All MOSFET. STP32NM50N Datasheet

 

STP32NM50N Datasheet and Replacement


   Type Designator: STP32NM50N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 190 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id|ⓘ - Maximum Drain Current: 22 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 9.5 nS
   Cossⓘ - Output Capacitance: 179 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm
   Package: TO-220
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STP32NM50N Datasheet (PDF)

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 stb32nm50n stf32nm50n stp32nm50n stw32nm50n.pdf pdf_icon

STP32NM50N

STB32NM50N, STF32NM50N,STP32NM50N, STW32NM50NN-channel 500 V, 0.1 typ., 22 A MDmesh II Power MOSFET in DPAK, TO-220FP, TO-220, TO-247 packagesDatasheet production dataFeaturesTABRDS(on) Order codes VDS ID PTOT2max.3132STB32NM50N 190 W1DPAKTO-220FPSTF32NM50N 35 W500 V 0.13 22 ASTP32NM50N 190 WTABSTW32NM50N 190 W 100% avalanche t

 8.1. Size:201K  st
 stp32n06.pdf pdf_icon

STP32NM50N

STP32N06LSTP32N06LFIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTP32N06L 60 V

 8.2. Size:393K  st
 stp32n06l.pdf pdf_icon

STP32NM50N

STP32N06LSTP32N06LFIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP32N06L 60 V

 8.3. Size:393K  st
 stp32n05l.pdf pdf_icon

STP32NM50N

STP32N05LSTP32N05LFIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP32N05L 50 V

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Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: AM1960NE | HLML6401 | PSMN003-30B | SRH03P098LD33TR-G | STB85NF55T4 | IM2132 | AP85T03GH-HF

Keywords - STP32NM50N MOSFET datasheet

 STP32NM50N cross reference
 STP32NM50N equivalent finder
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