All MOSFET. STP360N4F6 Datasheet

 

STP360N4F6 MOSFET. Datasheet pdf. Equivalent


   Type Designator: STP360N4F6
   Marking Code: 360N4F6
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 120 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 340 nC
   Cossⓘ - Output Capacitance: 1560 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0018 Ohm
   Package: TO-220

 STP360N4F6 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STP360N4F6 Datasheet (PDF)

 ..1. Size:176K  st
sti360n4f6 stp360n4f6.pdf

STP360N4F6
STP360N4F6

STI360N4F6, STP360N4F6N-channel 40 V, 120 A STripFET VI DeepGATE Power MOSFET in IPAK and TO-220 packagesDatasheet - preliminary dataFeaturesRDS(on) Order codes VDSS max IDTABTABSTI360N4F640 V

 9.1. Size:444K  st
stp36nf06l stb36nf06l.pdf

STP360N4F6
STP360N4F6

STP36NF06LSTB36NF06LN-channel 60V - 0.032 - 30A - TO-220 - D2PAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTP36NF06L 60V

 9.2. Size:396K  st
stp36n05l.pdf

STP360N4F6
STP360N4F6

STP36N05LSTP36N05LFIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP36N05L 50 V

 9.3. Size:414K  st
stp36n06.pdf

STP360N4F6
STP360N4F6

STP36N06STP36N06FIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP36N06 60 V

 9.4. Size:229K  st
stp36ne06 stp36ne06fp.pdf

STP360N4F6
STP360N4F6

STP36NE06STP36NE06FPN - CHANNEL 60V - 0.032 - 36A - TO-220/TO-220FPSTripFET POWER MOSFETTYPE VDSS RDS(on) IDSTP36NE06 60 V

 9.5. Size:330K  st
stp36nf06 stp36nf06fp.pdf

STP360N4F6
STP360N4F6

STP36NF06STP36NF06FPN-channel 60V - 0.032 - 30A - TO-220/TO-220FPSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTP36NF06 60V

 9.6. Size:349K  st
stp36ne06.pdf

STP360N4F6
STP360N4F6

STP36NE06STP36NE06FPN - CHANNEL 60V - 0.032 - 36A - TO-220/TO-220FPSTripFET POWER MOSFETTYPE VDSS RDS(on) IDSTP36NE06 60 V

 9.7. Size:401K  st
stp36n06l.pdf

STP360N4F6
STP360N4F6

STP36N06LSTP36N06LFIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP36N05L 60 V

 9.8. Size:112K  st
stp36ne06-.pdf

STP360N4F6
STP360N4F6

STP36NE06STP36NE06FP N - CHANNEL 60V - 0.032 - 36A - TO-220/TO-220FPSTripFET POWER MOSFETTYPE VDSS RDS(on) IDSTP36NE06 60 V

 9.9. Size:204K  st
stp36n05.pdf

STP360N4F6
STP360N4F6

STP36N05LSTP36N05LFIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTP36N05L 50 V

 9.10. Size:102K  st
stp36nf03l.pdf

STP360N4F6
STP360N4F6

STP36NF03LN-CHANNEL 30V - 0.015 - 40A TO-220LOW GATE CHARGE STripFETII POWER MOSFETPRELIMINARY DATATYPE VDSS RDS(on) IDSTP36NF03L 30 V

 9.11. Size:415K  st
stp36n60m6 stw36n60m6.pdf

STP360N4F6
STP360N4F6

STP36N60M6, STW36N60M6N-channel 600 V, 85 m typ., 30 A MDmesh M6 Power MOSFETs in TO-220 and TO-247 packages Datasheet - production data Features TABOrder code V R max. I DS DS(on) DSTP36N60M6 600 V 99 m 30 A STW36N60M6 33 Reduced switching losses 221 Lower R x area vs previous generation DS(on)1 Low gate input resistance 100% avalanche tested

 9.12. Size:759K  st
stp36n55m5 stw36n55m5.pdf

STP360N4F6
STP360N4F6

STP36N55M5 STW36N55M5N-channel 550 V, 0.06 typ., 33 A MDmesh V Power MOSFET in TO-220 and TO-247 packagesDatasheet production dataFeaturesVDSS @ RDS(on) Order codes IDTJmax maxTABSTP36N55M5600 V

 9.13. Size:328K  st
stp36nf06fp.pdf

STP360N4F6
STP360N4F6

STP36NF06STP36NF06FPN-channel 60V - 0.032 - 30A - TO-220/TO-220FPSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTP36NF06 60V

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: SLI80R850SJ | IRFS642

 

 
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