STP360N4F6 Specs and Replacement

Type Designator: STP360N4F6

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 300 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 120 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 1560 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0018 Ohm

Package: TO-220

STP360N4F6 substitution

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STP360N4F6 datasheet

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sti360n4f6 stp360n4f6.pdf pdf_icon

STP360N4F6

STI360N4F6, STP360N4F6 N-channel 40 V, 120 A STripFET VI DeepGATE Power MOSFET in I PAK and TO-220 packages Datasheet - preliminary data Features RDS(on) Order codes VDSS max ID TAB TAB STI360N4F6 40 V ... See More ⇒

 9.1. Size:444K  st
stp36nf06l stb36nf06l.pdf pdf_icon

STP360N4F6

STP36NF06L STB36NF06L N-channel 60V - 0.032 - 30A - TO-220 - D2PAK STripFET II Power MOSFET General features Type VDSS RDS(on) ID STP36NF06L 60V ... See More ⇒

 9.2. Size:396K  st
stp36n05l.pdf pdf_icon

STP360N4F6

STP36N05L STP36N05LFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STP36N05L 50 V ... See More ⇒

 9.3. Size:414K  st
stp36n06.pdf pdf_icon

STP360N4F6

STP36N06 STP36N06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STP36N06 60 V ... See More ⇒

Detailed specifications: STP33N60M2, STP33N65M2, STP3401, STP3401A, STP3407, STP3467, STP3481, STP34N65M5, IRFZ46N, STP36N55M5, STP36NE06, STP36NE06FP, STP36NF06FP, STP38N65M5, STP3HNK90Z, STP3N80K5, STP3NA50

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.