STP38N65M5 Datasheet and Replacement
Type Designator: STP38N65M5
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 190 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 30 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 74 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.095 Ohm
Package: TO-220
STP38N65M5 substitution
STP38N65M5 Datasheet (PDF)
stb38n65m5 stf38n65m5 stp38n65m5 stw38n65m5.pdf
STB38N65M5, STF38N65M5, STP38N65M5, STW38N65M5N-channel 650 V, 0.073 , 30 A MDmesh V Power MOSFET in D2PAK, TO-220FP, TO-220 and TO-247 packagesDatasheet - production dataFeaturesTAB2 VDSS @ RDS(on) 3 Order code ID1 TJmax max32D2PAKSTB38N65M51TO-220FP STF38N65M5
stb38n65m5 stp38n65m5 stw38n65m5.pdf
STB38N65M5, STP38N65M5, STW38N65M5N-channel 650 V, 0.073 typ., 30 A MDmesh V Power MOSFETs in D2PAK, TO-220 and TO-247 packagesDatasheet - production dataFeaturesTABVDS @ RDS(on) 2Order codes ID3TJmax max1STB38N65M5D2PAKSTP38N65M5 710 V 0.095 30 ATABSTW38N65M5 Higher VDSS rating and high dv/dt capability33 Excellent switching performance
stp38n06.pdf
STP38N06N - CHANNEL ENHANCEMENT MODE"ULTRA HIGH DENSITY" POWER MOS TRANSISTORPRELIMINARY DATATYPE V R IDSS DS(on) DSTP38N06 60 V
Datasheet: STP3467 , STP3481 , STP34N65M5 , STP360N4F6 , STP36N55M5 , STP36NE06 , STP36NE06FP , STP36NF06FP , HY1906P , STP3HNK90Z , STP3N80K5 , STP3NA50 , STP3NB100 , STP3NB80 , STP3NB80FP , STP3NK50Z , STP3NK90ZFP .
History: AM4502C | JMSH1566AK | JMTQ100N04A | TPP65R940C | IPD053N08N3 | ALD1102BPAL | HYG065N07NS1V
Keywords - STP38N65M5 MOSFET datasheet
STP38N65M5 cross reference
STP38N65M5 equivalent finder
STP38N65M5 lookup
STP38N65M5 substitution
STP38N65M5 replacement
History: AM4502C | JMSH1566AK | JMTQ100N04A | TPP65R940C | IPD053N08N3 | ALD1102BPAL | HYG065N07NS1V
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