STP38N65M5 Datasheet and Replacement
Type Designator: STP38N65M5
Marking Code: 38N65M5
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 190 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id| ⓘ - Maximum Drain Current: 30 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 71 nC
tr ⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 74 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.095 Ohm
Package: TO-220
STP38N65M5 substitution
STP38N65M5 Datasheet (PDF)
stb38n65m5 stf38n65m5 stp38n65m5 stw38n65m5.pdf

STB38N65M5, STF38N65M5, STP38N65M5, STW38N65M5N-channel 650 V, 0.073 , 30 A MDmesh V Power MOSFET in D2PAK, TO-220FP, TO-220 and TO-247 packagesDatasheet - production dataFeaturesTAB2 VDSS @ RDS(on) 3 Order code ID1 TJmax max32D2PAKSTB38N65M51TO-220FP STF38N65M5
stb38n65m5 stp38n65m5 stw38n65m5.pdf

STB38N65M5, STP38N65M5, STW38N65M5N-channel 650 V, 0.073 typ., 30 A MDmesh V Power MOSFETs in D2PAK, TO-220 and TO-247 packagesDatasheet - production dataFeaturesTABVDS @ RDS(on) 2Order codes ID3TJmax max1STB38N65M5D2PAKSTP38N65M5 710 V 0.095 30 ATABSTW38N65M5 Higher VDSS rating and high dv/dt capability33 Excellent switching performance
stp38n06.pdf

STP38N06N - CHANNEL ENHANCEMENT MODE"ULTRA HIGH DENSITY" POWER MOS TRANSISTORPRELIMINARY DATATYPE V R IDSS DS(on) DSTP38N06 60 V
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
History: IXTP15N50L2
Keywords - STP38N65M5 MOSFET datasheet
STP38N65M5 cross reference
STP38N65M5 equivalent finder
STP38N65M5 lookup
STP38N65M5 substitution
STP38N65M5 replacement
History: IXTP15N50L2



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