STP38N65M5
MOSFET. Datasheet pdf. Equivalent
Type Designator: STP38N65M5
Marking Code: 38N65M5
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 190
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5
V
|Id|ⓘ - Maximum Drain Current: 30
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 71
nC
trⓘ - Rise Time: 9
nS
Cossⓘ -
Output Capacitance: 74
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.095
Ohm
Package:
TO-220
STP38N65M5
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STP38N65M5
Datasheet (PDF)
..1. Size:1582K st
stb38n65m5 stf38n65m5 stp38n65m5 stw38n65m5.pdf
STB38N65M5, STF38N65M5, STP38N65M5, STW38N65M5N-channel 650 V, 0.073 , 30 A MDmesh V Power MOSFET in D2PAK, TO-220FP, TO-220 and TO-247 packagesDatasheet - production dataFeaturesTAB2 VDSS @ RDS(on) 3 Order code ID1 TJmax max32D2PAKSTB38N65M51TO-220FP STF38N65M5
..2. Size:1667K st
stb38n65m5 stp38n65m5 stw38n65m5.pdf
STB38N65M5, STP38N65M5, STW38N65M5N-channel 650 V, 0.073 typ., 30 A MDmesh V Power MOSFETs in D2PAK, TO-220 and TO-247 packagesDatasheet - production dataFeaturesTABVDS @ RDS(on) 2Order codes ID3TJmax max1STB38N65M5D2PAKSTP38N65M5 710 V 0.095 30 ATABSTW38N65M5 Higher VDSS rating and high dv/dt capability33 Excellent switching performance
8.1. Size:423K st
stp38n06.pdf
STP38N06N - CHANNEL ENHANCEMENT MODE"ULTRA HIGH DENSITY" POWER MOS TRANSISTORPRELIMINARY DATATYPE V R IDSS DS(on) DSTP38N06 60 V
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