STP3HNK90Z MOSFET. Datasheet pdf. Equivalent
Type Designator: STP3HNK90Z
Marking Code: P3HNK90Z
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 90 W
Maximum Drain-Source Voltage |Vds|: 800 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4.5 V
Maximum Drain Current |Id|: 3 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 26 nC
Rise Time (tr): 28 nS
Drain-Source Capacitance (Cd): 71 pF
Maximum Drain-Source On-State Resistance (Rds): 4.2 Ohm
Package: TO-220
STP3HNK90Z Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STP3HNK90Z Datasheet (PDF)
1.1. stp3hnk90z.pdf 
Size:380K _upd
STP3HNK90Z STF3HNK90Z N-channel 900V - 0.35Ω - 3A - TO-220 - TO-220FP Zener-protected SuperMESH™ Power MOSFET General features VDSS Type RDS(on) ID (@Tjmax) STP3HNK90Z 900 V < 0.42 Ω 3 A STP3HNK90Z 900 V < 0.42 Ω 3 A 3 2 1 ■ Extremely high dv/dt capability TO-220 TO-220FP ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Ver
1.2. stp3hnk90z stf3hnk90z.pdf Size:386K _st
STP3HNK90Z STF3HNK90Z N-channel 900V - 0.35? - 3A - TO-220 - TO-220FP Zener-protected SuperMESH Power MOSFET General features VDSS Type RDS(on) ID (@Tjmax) STP3HNK90Z 900 V < 0.42 ? 3 A STP3HNK90Z 900 V < 0.42 ? 3 A 3 2 1 Extremely high dv/dt capability TO-220 TO-220FP 100% avalanche tested Gate charge minimized Very low intrinsic capacitances Very good manufacturing
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
