All MOSFET. STP3HNK90Z Datasheet

 

STP3HNK90Z MOSFET. Datasheet pdf. Equivalent

Type Designator: STP3HNK90Z

Marking Code: P3HNK90Z

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 90 W

Maximum Drain-Source Voltage |Vds|: 800 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4.5 V

Maximum Drain Current |Id|: 3 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 26 nC

Rise Time (tr): 28 nS

Drain-Source Capacitance (Cd): 71 pF

Maximum Drain-Source On-State Resistance (Rds): 4.2 Ohm

Package: TO-220

STP3HNK90Z Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STP3HNK90Z Datasheet (PDF)

1.1. stp3hnk90z.pdf Size:380K _upd

STP3HNK90Z STP3HNK90Z

STP3HNK90Z STF3HNK90Z N-channel 900V - 0.35Ω - 3A - TO-220 - TO-220FP Zener-protected SuperMESH™ Power MOSFET General features VDSS Type RDS(on) ID (@Tjmax) STP3HNK90Z 900 V < 0.42 Ω 3 A STP3HNK90Z 900 V < 0.42 Ω 3 A 3 2 1 ■ Extremely high dv/dt capability TO-220 TO-220FP ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Ver

1.2. stp3hnk90z stf3hnk90z.pdf Size:386K _st

STP3HNK90Z STP3HNK90Z

STP3HNK90Z STF3HNK90Z N-channel 900V - 0.35? - 3A - TO-220 - TO-220FP Zener-protected SuperMESH Power MOSFET General features VDSS Type RDS(on) ID (@Tjmax) STP3HNK90Z 900 V < 0.42 ? 3 A STP3HNK90Z 900 V < 0.42 ? 3 A 3 2 1 Extremely high dv/dt capability TO-220 TO-220FP 100% avalanche tested Gate charge minimized Very low intrinsic capacitances Very good manufacturing

 

Datasheet: IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC , IRFP3710 , J111 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP441 , IRFP442 , IRFP443 .

 

 
Back to Top