STP3NB80 Specs and Replacement

Type Designator: STP3NB80

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 90 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 2.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 60 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 6.5 Ohm

Package: TO-220

STP3NB80 substitution

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STP3NB80 datasheet

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 stp3nb80 stp3nb80fp.pdf pdf_icon

STP3NB80

STP3NB80 STP3NB80FP N - CHANNEL 800V - 4.6 - 2.6A - TO-220/TO-220FP PowerMESH MOSFET TYPE VDSS RDS(on) ID STP3NB80 800 V ... See More ⇒

 ..2. Size:346K  st
 stp3nb80.pdf pdf_icon

STP3NB80

STP3NB80 STP3NB80FP N - CHANNEL 800V - 4.6 - 2.6A - TO-220/TO-220FP PowerMESH MOSFET TYPE VDSS RDS(on) ID STP3NB80 800 V ... See More ⇒

 0.1. Size:353K  st
 stp3nb80-fp.pdf pdf_icon

STP3NB80

STP3NB80 STP3NB80FP N - CHANNEL 800V - 4.6 - 2.6A - TO-220/TO-220FP PowerMESH MOSFET TYPE VDSS RDS(on) ID STP3NB80 800 V ... See More ⇒

 8.1. Size:109K  st
 stp3nb100.pdf pdf_icon

STP3NB80

STP3NB100 STP3NB100FP N-CHANNEL 1000V - 5.3 - 3A TO-220/TO-220FP PowerMesh MOSFET PRELIMINARY DATA TYPE VDSS RDS(on) ID STP3NB100 1000 V ... See More ⇒

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Detailed specifications: STP36NE06, STP36NE06FP, STP36NF06FP, STP38N65M5, STP3HNK90Z, STP3N80K5, STP3NA50, STP3NB100, AOD4184A, STP3NB80FP, STP3NK50Z, STP3NK90ZFP, STP400N4F6, STP40N20, STP40N60M2, STP40N65M2, STP40NS15

Keywords - STP3NB80 MOSFET specs

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