All MOSFET. STP3NB80 Datasheet

 

STP3NB80 Datasheet and Replacement


   Type Designator: STP3NB80
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 90 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 2.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 60 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 6.5 Ohm
   Package: TO-220
 

 STP3NB80 substitution

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STP3NB80 Datasheet (PDF)

 ..1. Size:103K  st
 stp3nb80 stp3nb80fp.pdf pdf_icon

STP3NB80

STP3NB80STP3NB80FP N - CHANNEL 800V - 4.6 - 2.6A - TO-220/TO-220FPPowerMESH MOSFETTYPE VDSS RDS(on) IDSTP3NB80 800 V

 ..2. Size:346K  st
 stp3nb80.pdf pdf_icon

STP3NB80

STP3NB80STP3NB80FP N - CHANNEL 800V - 4.6 - 2.6A - TO-220/TO-220FPPowerMESH MOSFETTYPE VDSS RDS(on) IDSTP3NB80 800 V

 0.1. Size:353K  st
 stp3nb80-fp.pdf pdf_icon

STP3NB80

STP3NB80STP3NB80FP N - CHANNEL 800V - 4.6 - 2.6A - TO-220/TO-220FPPowerMESH MOSFETTYPE VDSS RDS(on) IDSTP3NB80 800 V

 8.1. Size:109K  st
 stp3nb100.pdf pdf_icon

STP3NB80

STP3NB100STP3NB100FPN-CHANNEL 1000V - 5.3 - 3A TO-220/TO-220FPPowerMesh MOSFETPRELIMINARY DATATYPE VDSS RDS(on) IDSTP3NB100 1000 V

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Datasheet: STP36NE06 , STP36NE06FP , STP36NF06FP , STP38N65M5 , STP3HNK90Z , STP3N80K5 , STP3NA50 , STP3NB100 , HY1906P , STP3NB80FP , STP3NK50Z , STP3NK90ZFP , STP400N4F6 , STP40N20 , STP40N60M2 , STP40N65M2 , STP40NS15 .

History: IPP039N04L | SM6008NF | S70N08R | IPD78CN10N | AONY36352 | SM6016NSU | R6507ENJ

Keywords - STP3NB80 MOSFET datasheet

 STP3NB80 cross reference
 STP3NB80 equivalent finder
 STP3NB80 lookup
 STP3NB80 substitution
 STP3NB80 replacement

 

 
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