STP40N20 Datasheet and Replacement
Type Designator: STP40N20
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 160 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 40 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 44 nS
Cossⓘ - Output Capacitance: 510 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
Package: TO-220
STP40N20 substitution
STP40N20 Datasheet (PDF)
stb40n20 stb40n20 stp40n20 stp40n20fp stw40n20 stp40n20 stw40n20.pdf

STP40N20 - STF40N20STB40N20 - STW40N20N-channel 200V - 0.038 -40A- D2PAK/TO-220/TO-220FP/TO-247Low gate charge STripFET Power MOSFETGeneral featuresType VDSS RDS(on) ID PW3STB40N20 200V
stp40n03l-20.pdf

STP40N03L-20N - CHANNEL ENHANCEMENT MODE"ULTRA HIGH DENSITY" POWER MOS TRANSISTORPRELIMINARY DATATYPE V R IDSS DS(on) DSTP40N03L-20 30 V
stp40nf10l.pdf

STP40NF10LN-channel 100V - 0.028 - 40A TO-220Low gate charge STripFET Power MOSFETGeneral featuresType VDSS RDS(on) IDSTP40NF10L 100V
sti40n65m2 stp40n65m2.pdf

STI40N65M2, STP40N65M2 N-channel 650 V, 0.087 typ., 32 A MDmesh M2 Power MOSFET in IPAK and TO-220 packages Datasheet - production data Features TAB TABOrder code V R max. I DS DS(on) DSTI40N65M2 650 V 0.099 32 A STP40N65M2 3 Extremely low gate charge 232 1 Excellent output capacitance (COSS) profile 1IPAK TO-220 100% avalanche tested
Datasheet: STP3N80K5 , STP3NA50 , STP3NB100 , STP3NB80 , STP3NB80FP , STP3NK50Z , STP3NK90ZFP , STP400N4F6 , BS170 , STP40N60M2 , STP40N65M2 , STP40NS15 , STP413D , STP4403 , STP4407 , STP4407A , STP4435 .
History: NCE30H12K | JFPC5N80C
Keywords - STP40N20 MOSFET datasheet
STP40N20 cross reference
STP40N20 equivalent finder
STP40N20 lookup
STP40N20 substitution
STP40N20 replacement
History: NCE30H12K | JFPC5N80C



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