All MOSFET. IXFH80N10Q Datasheet

 

IXFH80N10Q MOSFET. Datasheet pdf. Equivalent


   Type Designator: IXFH80N10Q
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 360 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 80 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 180 nC
   trⓘ - Rise Time: 70 nS
   Cossⓘ - Output Capacitance: 1600 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
   Package: TO247

 IXFH80N10Q Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXFH80N10Q Datasheet (PDF)

 ..1. Size:52K  ixys
 ixfh80n10q ixft80n10q.pdf

IXFH80N10Q IXFH80N10Q

IXFH 80N10Q VDSS = 100 VHiPerFETTMIXFT 80N10Q ID25 = 80 APower MOSFETs RDS(on) = 15 mWQ-Classtrr 200nsN-Channel Enhancement ModeAvalanche Rated, High dV/dtLow Gate Charge and CapacitancesPreliminary dataTO-247 AD (IXFH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 100 VVDGR TJ = 25C to 150C; RGS = 1 MW 100 VVGS Continuous 20 VVGSM Trans

 7.1. Size:70K  ixys
 ixfh80n20q ixfk80n20q ixft80n20q.pdf

IXFH80N10Q IXFH80N10Q

IXFH 80N20QHiPerFETTMVDSS = 200 VIXFK 80N20QPower MOSFETs ID25 = 80 AIXFT 80N20QQ-Class RDS(on) = 28 mWtrr 200 nsN-Channel Enhancement ModeAvalanche Rated, High dv/dt, Low QgPreliminary data sheetSymbol Test Conditions Maximum Ratings TO-247 AD (IXFH)VDSS TJ = 25C to 150C 200 VVDGR TJ = 25C to 150C; RGS = 1 MW 200 V(TAB)VGS Continuous 20 VVGSM Transi

 7.2. Size:114K  ixys
 ixfh80n65x2.pdf

IXFH80N10Q IXFH80N10Q

Advance Technical InformationX2-Class HiPerFETTM VDSS = 650VIXFH80N65X2Power MOSFET ID25 = 80A RDS(on) 40m N-Channel Enhancement ModeAvalanche RatedTO-247Fast Intrinsic DiodeGDSD (Tab)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 650 VG = Gate D = DrainVDGR TJ = 25C to 150C, RGS = 1M 650 VS =

 7.3. Size:54K  ixys
 ixfh80n085 ixft80n085.pdf

IXFH80N10Q IXFH80N10Q

IXFH 80N085 VDSS = 85 VHiPerFETTMIXFT 80N085 ID25 = 80 APower MOSFETsRDS(on) = 9 mWN-Channel Enhancement Modetrr 200 nsAvalanche Rated, High dv/dtPreliminary data sheetSymbol Test Conditions Maximum Ratings TO-247 AD (IXFH)VDSS TJ = 25C to 150C85 VVDGR TJ = 25C to 150C; RGS = 1 MW 85 VVGS Continuous 20 VVGSM Transient 30 V(TAB)ID25 TC = 25C80 AIL

 7.4. Size:211K  ixys
 ixfh80n65x2 ixfk80n65x2.pdf

IXFH80N10Q IXFH80N10Q

X2-Class HiPerFETTM VDSS = 650VIXFH80N65X2Power MOSFET ID25 = 80AIXFK80N65X2 RDS(on) 38m TO-247 (IXFH)N-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeGDSD (Tab)TO-264P (IXFK)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 650 VVDGR TJ = 25C to 150C, RGS = 1M 650 VVGSS Continuous

 7.5. Size:245K  ixys
 ixfa80n25x3 ixfp80n25x3 ixfq80n25x3 ixfh80n25x3.pdf

IXFH80N10Q IXFH80N10Q

Preliminary Technical InformationX3-Class HiPerFETTM VDSS = 250VIXFA80N25X3Power MOSFET ID25 = 80AIXFP80N25X3 RDS(on) 16m IXFQ80N25X3TO-263 AA (IXFA)IXFH80N25X3N-Channel Enhancement ModeAvalanche RatedGSFast Intrinsic DiodeD (Tab)TO-220AB (IXFP)Symbol Test Conditions Maximum RatingsGVDSS TJ = 25 C to 150 C250D S D (Tab)VTO-3P (IXFQ)VDGR

 7.6. Size:261K  inchange semiconductor
 ixfh80n65x2.pdf

IXFH80N10Q IXFH80N10Q

isc N-Channel MOSFET Transistor IXFH80N65X2FEATURESWith TO-247 packagingWith low gate drive requirementsEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 650 VDSSV G

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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