STP40NS15 Specs and Replacement

Type Designator: STP40NS15

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 140 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 40 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 45 nS

Cossⓘ - Output Capacitance: 380 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.052 Ohm

Package: TO-220

STP40NS15 substitution

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STP40NS15 datasheet

 ..1. Size:81K  st
stp40ns15.pdf pdf_icon

STP40NS15

STP40NS15 N-CHANNEL 150V - 0.042 - 40A TO-220 MESH OVERLAY MOSFET PRELIMINARY DATA TYPE VDSS RDS(on) ID STP40NS15 150 V ... See More ⇒

 8.1. Size:108K  st
stp40n03l-20.pdf pdf_icon

STP40NS15

STP40N03L-20 N - CHANNEL ENHANCEMENT MODE "ULTRA HIGH DENSITY" POWER MOS TRANSISTOR PRELIMINARY DATA TYPE V R I DSS DS(on) D STP40N03L-20 30 V ... See More ⇒

 8.2. Size:239K  st
stp40nf10l.pdf pdf_icon

STP40NS15

STP40NF10L N-channel 100V - 0.028 - 40A TO-220 Low gate charge STripFET Power MOSFET General features Type VDSS RDS(on) ID STP40NF10L 100V ... See More ⇒

 8.3. Size:440K  st
sti40n65m2 stp40n65m2.pdf pdf_icon

STP40NS15

STI40N65M2, STP40N65M2 N-channel 650 V, 0.087 typ., 32 A MDmesh M2 Power MOSFET in I PAK and TO-220 packages Datasheet - production data Features TAB TAB Order code V R max. I DS DS(on) D STI40N65M2 650 V 0.099 32 A STP40N65M2 3 Extremely low gate charge 2 3 2 1 Excellent output capacitance (COSS) profile 1 I PAK TO-220 100% avalanche tested ... See More ⇒

Detailed specifications: STP3NB80, STP3NB80FP, STP3NK50Z, STP3NK90ZFP, STP400N4F6, STP40N20, STP40N60M2, STP40N65M2, IRF740, STP413D, STP4403, STP4407, STP4407A, STP4435, STP4435A, STP45N10F7, STP45N65M5

Keywords - STP40NS15 MOSFET specs

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