STP40NS15
MOSFET. Datasheet pdf. Equivalent
Type Designator: STP40NS15
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 140
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 40
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 100
nC
trⓘ - Rise Time: 45
nS
Cossⓘ -
Output Capacitance: 380
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.052
Ohm
Package:
TO-220
STP40NS15
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STP40NS15
Datasheet (PDF)
..1. Size:81K st
stp40ns15.pdf
STP40NS15N-CHANNEL 150V - 0.042 - 40A TO-220MESH OVERLAY MOSFETPRELIMINARY DATATYPE VDSS RDS(on) IDSTP40NS15 150 V
8.1. Size:108K st
stp40n03l-20.pdf
STP40N03L-20N - CHANNEL ENHANCEMENT MODE"ULTRA HIGH DENSITY" POWER MOS TRANSISTORPRELIMINARY DATATYPE V R IDSS DS(on) DSTP40N03L-20 30 V
8.2. Size:239K st
stp40nf10l.pdf
STP40NF10LN-channel 100V - 0.028 - 40A TO-220Low gate charge STripFET Power MOSFETGeneral featuresType VDSS RDS(on) IDSTP40NF10L 100V
8.3. Size:440K st
sti40n65m2 stp40n65m2.pdf
STI40N65M2, STP40N65M2 N-channel 650 V, 0.087 typ., 32 A MDmesh M2 Power MOSFET in IPAK and TO-220 packages Datasheet - production data Features TAB TABOrder code V R max. I DS DS(on) DSTI40N65M2 650 V 0.099 32 A STP40N65M2 3 Extremely low gate charge 232 1 Excellent output capacitance (COSS) profile 1IPAK TO-220 100% avalanche tested
8.4. Size:246K st
stp40nf12.pdf
STP40NF12N-channel 120V - 0.028 - 40A TO-220Low gate charge STripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTP40NF12 120V
8.5. Size:451K st
stp40nf10.pdf
STP40NF10N-channel 100 V, 0.025 , 50 A TO-220low gate charge STripFET II Power MOSFETFeaturesOrder code VDSS RDS(on) max. IDSTP40NF10 100 V
8.6. Size:477K st
stp40nf20 stf40nf20 stb40nf20 stw40nf20.pdf
STP40NF20 - STF40NF20STB40NF20 - STW40NF20N-channel 200V - 0.038 -40A- D2PAK/TO-220/TO-220FP/TO-247Low gate charge STripFET Power MOSFETFeaturesType VDSS RDS(on) ID PW3STB40NF20 200V
8.9. Size:1189K st
stb40n60m2 stp40n60m2 stw40n60m2.pdf
STB40N60M2, STP40N60M2,STW40N60M2N-channel 600 V, 0.078 typ., 34 A MDmesh II Plus low Qg Power MOSFETs in D2PAK, TO-220 and TO-247 packagesDatasheet - production dataFeaturesTABTABOrder codes VDS @ TJmax RDS(on) max ID2STB40N60M23132 STP40N60M2 650 V 0.088 34 AD2PAK1STW40N60M2TO-220 Extremely low gate charge Lower RDS(on) x area vs previous
8.11. Size:267K st
stp40nf03l.pdf
STP40NF03LN - CHANNEL 30V - 0.020 - 40A TO-220STripFET POWER MOSFETTYPE VDSS RDS(on) IDSTP40NF03L 30 V
8.12. Size:685K st
stp40nf10 std40nf10.pdf
STP40NF10STD40NF10 - STB40NF10N-CHANNEL 100V - 0.024 - 50A TO-220/DPAK/D2PAKLOW GATE CHARGE STripFET II POWER MOSFETTYPE VDSS RDS(on) IDSTP40NF10 100 V
8.13. Size:429K st
stf40nf03l stp40nf03l.pdf
STF40NF03LSTP40NF03LN-channel 30 V, 0.018 , 40 A TO-220, TO-220FPSTripFET Power MOSFETFeaturesType VDSS RDS(on) max IDSTF40NF03L 30 V 0.022 23 ASTP40NF03L 30 V 0.022 40 A3 3 Low threshold device2 21 1ApplicationTO-220TO-220FP Switching applicationsDescriptionThis Power MOSFET is the latest development of STMicroelectronics unique "single f
8.14. Size:484K st
stb40nf20 stf40nf20 stp40nf20 stw40nf20.pdf
STP40NF20 - STF40NF20STB40NF20 - STW40NF20N-channel 200V - 0.038 -40A- D2PAK/TO-220/TO-220FP/TO-247Low gate charge STripFET Power MOSFETFeaturesType VDSS RDS(on) ID PW3STB40NF20 200V
8.15. Size:323K st
stp40ne03l-20.pdf
STP40NE03L-20N - CHANNEL ENHANCEMENT MODE" SINGLE FEATURE SIZE " POWER MOSFETTYPE VDSS RDS(on) IDSTP40NE03L-20 30 V
8.16. Size:373K st
stp40nf10 std40nf10.pdf
STD40NF10STP40NF10N-channel 100V - 0.025 - 50A TO-220 / DPAKLow gate charge STripFET II Power MOSFETFeaturesType VDSS RDS(on) Max IDSTD40NF10 100V
8.17. Size:261K inchange semiconductor
stp40nf10.pdf
isc N-ChannelMOSFET Transistor STP40NF10FEATURESDrain Current I = 50A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 28m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.
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