All MOSFET. STP40NS15 Datasheet

 

STP40NS15 Datasheet and Replacement


   Type Designator: STP40NS15
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 140 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 40 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 45 nS
   Cossⓘ - Output Capacitance: 380 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.052 Ohm
   Package: TO-220
 

 STP40NS15 substitution

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STP40NS15 Datasheet (PDF)

 ..1. Size:81K  st
stp40ns15.pdf pdf_icon

STP40NS15

STP40NS15N-CHANNEL 150V - 0.042 - 40A TO-220MESH OVERLAY MOSFETPRELIMINARY DATATYPE VDSS RDS(on) IDSTP40NS15 150 V

 8.1. Size:108K  st
stp40n03l-20.pdf pdf_icon

STP40NS15

STP40N03L-20N - CHANNEL ENHANCEMENT MODE"ULTRA HIGH DENSITY" POWER MOS TRANSISTORPRELIMINARY DATATYPE V R IDSS DS(on) DSTP40N03L-20 30 V

 8.2. Size:239K  st
stp40nf10l.pdf pdf_icon

STP40NS15

STP40NF10LN-channel 100V - 0.028 - 40A TO-220Low gate charge STripFET Power MOSFETGeneral featuresType VDSS RDS(on) IDSTP40NF10L 100V

 8.3. Size:440K  st
sti40n65m2 stp40n65m2.pdf pdf_icon

STP40NS15

STI40N65M2, STP40N65M2 N-channel 650 V, 0.087 typ., 32 A MDmesh M2 Power MOSFET in IPAK and TO-220 packages Datasheet - production data Features TAB TABOrder code V R max. I DS DS(on) DSTI40N65M2 650 V 0.099 32 A STP40N65M2 3 Extremely low gate charge 232 1 Excellent output capacitance (COSS) profile 1IPAK TO-220 100% avalanche tested

Datasheet: STP3NB80 , STP3NB80FP , STP3NK50Z , STP3NK90ZFP , STP400N4F6 , STP40N20 , STP40N60M2 , STP40N65M2 , IRF740 , STP413D , STP4403 , STP4407 , STP4407A , STP4435 , STP4435A , STP45N10F7 , STP45N65M5 .

History: NCEP1520BK | WMR12N03T1 | R8008ANJ | NCEP1570GU | STK7002 | R8010ANX | 1N80

Keywords - STP40NS15 MOSFET datasheet

 STP40NS15 cross reference
 STP40NS15 equivalent finder
 STP40NS15 lookup
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